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• W2735251505 abstract "Memory cell selection for 28 nm and beyond and its integration into new eNVM technology have been investigated through atomic layer deposition (ALD) HfO 2 resistive memory devices. Both amorphous and crystalline HfO 2 layers exhibit promising switching characteristics. It was shown that more than 3 times less power is required to activate the memory device fabricated using the amorphous layer. The forming voltages for both of the memory cell are greater than 10 Volt relative to layer thickness of 50 nm. As an alternative potential resistive memory element, SiOx layer formed on n and p type Si wafers exhibited interesting forming features." @default.
• W2735251505 created "2017-07-21" @default.
• W2735251505 creator A5008327581 @default.
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• W2735251505 date "2017-04-01" @default.
• W2735251505 modified "2023-09-24" @default.
• W2735251505 title "Feasibility demonstration of new e-NVM cells suitable for integration at 28nm" @default.
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• W2735251505 doi "https://doi.org/10.1109/ulis.2017.7962599" @default.
• W2735251505 hasPublicationYear "2017" @default.
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