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• W2912962621 abstract "We demonstrated vertical InGaAs nanowire (NW) array photodiodes on Si that were optically responsive to visible light (635 nm) and near-infrared light (∼1.55 μm). The vertical NWs were directly grown on Si by selective-area growth. Implementation of a heavily Sn-doped contact layer in the InGaAs NWs improved the diode characteristic because of a lower series resistance, and as a result, a photoresponsivity of 0.25 A/W was obtained at 635 nm, which was twice that before the improvement. Moreover, the photocurrent density of InGaAs–InP core–shell NWs was about 20-fold higher under illumination with light in the 1.55 μm wavelength band as a result of suppression of surface recombination. These findings are expected to be useful for NW-based photovoltaic applications for optical interconnection and Si platforms." @default.
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• W2912962621 date "2019-02-01" @default.
• W2912962621 modified "2023-10-17" @default.
• W2912962621 title "Vertical InGaAs Nanowire Array Photodiodes on Si" @default.
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• W2912962621 doi "https://doi.org/10.1021/acsphotonics.8b01089" @default.
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