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- W4210366594 abstract "Topological materials, possessing spin-momentum locked topological surface states (TSS), have attracted much interest due to their potential applications in spintronics. ensuremath{alpha}-phase Sn (ensuremath{alpha}-Sn), being one of them, displays enriched topological phases via band-gap engineering through a strain or confinement effect. In this work, we investigated the band evolution of in-plane compressively strained ensuremath{alpha}-Sn(001) thin films on InSb(001) in a wide range of thickness from 3 bilayers (BL) to 370 BL by combining angle-resolved photoemission spectra and first-principles calculations. Gapped surface states evolved to a linearly dispersive TSS at a critical thickness of 6 BL, indicating that the system undergoes a phase transition from topologically trivial to nontrivial. For films thicker than 30 BL, additional Rashba-like surface states (RSS) were identified. These RSS served as preformed TSS in another strain-induced topological phase transition. In thick films, 370-BL ensuremath{alpha}-Sn(001), so as to preclude the confinement effect in thin films, our results were consistent with a Dirac semimetal phase with Dirac nodes located along $mathrm{ensuremath{Gamma}}--Z$. This thickness-dependent band-structure study deepens our understanding of topological phase transitions and the evolution of Dirac states. Furthermore, the coexistence of TSS and RSS in a Dirac semimetal ensuremath{alpha}-Sn might significantly enhance the potential for spintronic applications." @default.
- W4210366594 created "2022-02-08" @default.
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- W4210366594 date "2022-02-03" @default.
- W4210366594 modified "2023-10-15" @default.
- W4210366594 title "Thickness-dependent topological phase transition and Rashba-like preformed topological surface states of α-Sn(001) thin films on InSb(001)" @default.
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- W4210366594 doi "https://doi.org/10.1103/physrevb.105.075109" @default.
- W4210366594 hasPublicationYear "2022" @default.
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