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- W4310368839 abstract "Abstract Al:LiF/PTQBT:PCBM/PEDOT:PSS/ITO/glass organic-based diode is fabricated with different weight ratios in PTQBT:PCBM active layer. The diodes D1, D2 and D3 are prepared using the precursor solution for spin coating process as 1:2, 1:3 and 1:4, respectively. Under dark, main diode parameters are extracted by conventional thermionic emission theory using the results of <?CDATA $I-V$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mi>I</mml:mi> <mml:mo>−</mml:mo> <mml:mi>V</mml:mi> </mml:math> measurements. Parasitic resistance contribution, non-ideal barrier height formation and high values of ideality factor indicate possible effects of space charge limited current flow mechanism on forward biased <?CDATA $I-V$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mi>I</mml:mi> <mml:mo>−</mml:mo> <mml:mi>V</mml:mi> </mml:math> characteristics. At saturated voltage region, series resistances are calculated and the results are evaluated according to Cheung’s method. The possible voltage sharing between interface layer and depletion region are also investigated by analysis of density of interface states. In addition, field effect is found in a major role on the reverse current flow and the mechanism is evaluated according to Schottky-Richardson model." @default.
- W4310368839 created "2022-12-09" @default.
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- W4310368839 date "2022-12-12" @default.
- W4310368839 modified "2023-10-16" @default.
- W4310368839 title "Dark conduction mechanisms of PTQBDT based heterojunction diode" @default.
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