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• W4380450087 endingPage "30955" @default.
• W4380450087 startingPage "30944" @default.
• W4380450087 abstract "We directly measure the three-dimensional movement of intrinsic point defects driven by applied electric fields inside ZnO nano- and micro-wire metal-semiconductor-metal device structures. Using depth- and spatially resolved cathodoluminescence spectroscopy (CLS) in situ to map the spatial distributions of local defect densities with increasing applied bias, we drive the reversible conversion of metal-ZnO contacts from rectifying to Ohmic and back. These results demonstrate how defect movements systematically determine Ohmic and Schottky barriers to ZnO nano- and microwires and how they can account for the widely reported instability in nanowire transport. Exceeding a characteristic threshold voltage, in situ CLS reveals a current-induced thermal runaway that drives the radial diffusion of defects toward the nanowire free surface, causing VO defects to accumulate at the metal-semiconductor interfaces. In situ post- vs pre-breakdown CLS reveal micrometer-scale wire asperities, which X-ray photoelectron spectroscopy (XPS) finds to have highly oxygen-deficient surface layers that can be attributed to the migration of preexisting VO species. These findings show the importance of in-operando intrinsic point-defect migration during nanoscale electric field measurements in general. This work also demonstrates a novel method for ZnO nanowire refinement and processing." @default.
• W4380450087 created "2023-06-14" @default.
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• W4380450087 date "2023-06-13" @default.
• W4380450087 modified "2023-09-28" @default.
• W4380450087 title "Electric Field Manipulation of Defects and Schottky Barrier Control inside ZnO Nanowires" @default.
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• W4380450087 doi "https://doi.org/10.1021/acsami.3c02132" @default.
• W4380450087 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37311023" @default.
• W4380450087 hasPublicationYear "2023" @default.
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