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- W4232902015 created "2022-05-12" @default.
- W4232902015 date "2018-01-01" @default.
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- W4232902015 title "In-Situ Synchrotron X-Ray Topography Study on the Stress Relaxation Process in 4H-SiC Homoepitaxial Layers" @default.
- W4232902015 doi "https://doi.org/10.1149/ma2018-02/38/1291" @default.
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