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- W8381630 endingPage "191" @default.
- W8381630 startingPage "190" @default.
- W8381630 created "2016-06-24" @default.
- W8381630 creator A5082358358 @default.
- W8381630 date "1981-06-20" @default.
- W8381630 modified "2023-09-24" @default.
- W8381630 title "4. 高いHc2を持つ超伝導体Pb1.2-xGdxMo6S8の研究(大阪大学理学研究科物理学専攻,修士論文アブストラクト(1980年度))" @default.
- W8381630 hasPublicationYear "1981" @default.
- W8381630 type Work @default.
- W8381630 sameAs 8381630 @default.
- W8381630 citedByCount "0" @default.
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- W8381630 hasAuthorship W8381630A5082358358 @default.
- W8381630 hasConcept C162324750 @default.
- W8381630 hasConceptScore W8381630C162324750 @default.
- W8381630 hasIssue "3" @default.
- W8381630 hasLocation W83816301 @default.
- W8381630 hasOpenAccess W8381630 @default.
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- W8381630 hasVolume "36" @default.
- W8381630 isParatext "false" @default.
- W8381630 isRetracted "false" @default.
- W8381630 magId "8381630" @default.
- W8381630 workType "article" @default.