Matches in Wikidata for { <http://www.wikidata.org/entity/Q53206184> ?p ?o ?g. }
- Q53206184 description "2015 nî lūn-bûn" @default.
- Q53206184 description "2015年の論文" @default.
- Q53206184 description "2015年学术文章" @default.
- Q53206184 description "2015年学术文章" @default.
- Q53206184 description "2015年学术文章" @default.
- Q53206184 description "2015年学术文章" @default.
- Q53206184 description "2015年学术文章" @default.
- Q53206184 description "2015年学术文章" @default.
- Q53206184 description "2015年學術文章" @default.
- Q53206184 description "2015年學術文章" @default.
- Q53206184 description "2015年學術文章" @default.
- Q53206184 description "2015年學術文章" @default.
- Q53206184 description "2015年學術文章" @default.
- Q53206184 description "2015년 논문" @default.
- Q53206184 description "article científic" @default.
- Q53206184 description "article scientific" @default.
- Q53206184 description "article scientifique" @default.
- Q53206184 description "articol științific" @default.
- Q53206184 description "articolo scientifico" @default.
- Q53206184 description "artigo científico" @default.
- Q53206184 description "artigo científico" @default.
- Q53206184 description "artigo científico" @default.
- Q53206184 description "artikel ilmiah" @default.
- Q53206184 description "artikull shkencor" @default.
- Q53206184 description "artikulong pang-agham" @default.
- Q53206184 description "artykuł naukowy" @default.
- Q53206184 description "artículo científico publicado en 2015" @default.
- Q53206184 description "artículu científicu" @default.
- Q53206184 description "bilimsel makale" @default.
- Q53206184 description "bài báo khoa học" @default.
- Q53206184 description "naučni članak" @default.
- Q53206184 description "scienca artikolo" @default.
- Q53206184 description "scientific article published on 22 June 2015" @default.
- Q53206184 description "scientific article published on 22 June 2015" @default.
- Q53206184 description "scientific article published on 22 June 2015" @default.
- Q53206184 description "teaduslik artikkel" @default.
- Q53206184 description "tieteellinen artikkeli" @default.
- Q53206184 description "tudományos cikk" @default.
- Q53206184 description "vedecký článok" @default.
- Q53206184 description "vetenskaplig artikel" @default.
- Q53206184 description "videnskabelig artikel" @default.
- Q53206184 description "vitenskapelig artikkel" @default.
- Q53206184 description "vitskapeleg artikkel" @default.
- Q53206184 description "vědecký článek" @default.
- Q53206184 description "wetenschappelijk artikel" @default.
- Q53206184 description "wissenschaftlicher Artikel" @default.
- Q53206184 description "επιστημονικό άρθρο" @default.
- Q53206184 description "мақолаи илмӣ" @default.
- Q53206184 description "наукова стаття, опублікована в червні 2015" @default.
- Q53206184 description "научна статия" @default.
- Q53206184 description "научная статья" @default.
- Q53206184 description "научни чланак" @default.
- Q53206184 description "научни чланак" @default.
- Q53206184 description "מאמר מדעי" @default.
- Q53206184 description "مقالة علمية نشرت في 22 يونيو 2015" @default.
- Q53206184 description "২২ জুন ২০১৫-এ প্রকাশিত বৈজ্ঞানিক নিবন্ধ" @default.
- Q53206184 description "บทความทางวิทยาศาสตร์" @default.
- Q53206184 description "სამეცნიერო სტატია" @default.
- Q53206184 name "Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage." @default.
- Q53206184 name "Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage." @default.
- Q53206184 type Item @default.
- Q53206184 label "Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage." @default.
- Q53206184 label "Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage." @default.
- Q53206184 prefLabel "Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage." @default.
- Q53206184 prefLabel "Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage." @default.
- Q53206184 P1433 Q53206184-37D5EC9A-9B58-4066-A768-B83A0B8C8951 @default.
- Q53206184 P1476 Q53206184-B32A538F-6439-46E6-A376-0FD01DA7356E @default.
- Q53206184 P2093 Q53206184-AD8F8546-CF3A-4D1F-8094-D78EFFDCB924 @default.
- Q53206184 P2093 Q53206184-CA8A15BE-395D-4A15-8265-FED919531CED @default.
- Q53206184 P2093 Q53206184-D16BD258-7739-4D18-859F-2E7FC34F7CDA @default.
- Q53206184 P304 Q53206184-526DB8F8-5DBF-4A2A-9E1E-D8DD36087532 @default.
- Q53206184 P31 Q53206184-ACCA3AEA-29F0-49BA-9228-026546F5F7F9 @default.
- Q53206184 P356 Q53206184-E71DC8BD-2D9A-481F-9A0D-B9C4744A078D @default.
- Q53206184 P407 Q53206184-53E3EFD6-DC29-4CD7-A1A5-8E7F356EC1AF @default.
- Q53206184 P433 Q53206184-1BE02751-6A8B-4EF3-8550-6874388C274B @default.
- Q53206184 P478 Q53206184-80084FE5-6ED6-4BAC-B6B7-D9BBDB34C639 @default.
- Q53206184 P50 Q53206184-46B866A4-DA5C-4906-ACD4-6A02FDD8A3BA @default.
- Q53206184 P50 Q53206184-6399085B-4AF7-4D11-BFC7-43D207718F46 @default.
- Q53206184 P50 Q53206184-8B6AD0A2-84AD-4379-ABEE-14FFA4537063 @default.
- Q53206184 P50 Q53206184-A0E3BB4D-237D-4875-9570-44CAB7FC3C91 @default.
- Q53206184 P50 Q53206184-A669DECB-621A-4961-980E-F86FBC484817 @default.
- Q53206184 P50 Q53206184-B59F908C-DB21-4CC3-80AD-A4F1EFFE5AA4 @default.
- Q53206184 P50 Q53206184-BAD22189-C747-426A-BDED-8767530F6F5F @default.
- Q53206184 P50 Q53206184-CE1AC6BE-03C8-4DD3-AA8E-EE1ACD95E705 @default.
- Q53206184 P577 Q53206184-BF700765-D03D-460E-82BC-0E6F3D11B875 @default.
- Q53206184 P698 Q53206184-C2CB8A21-A6FF-41DA-A16E-B0FB7FA6D1C6 @default.
- Q53206184 P356 ACSNANO.5B01341 @default.
- Q53206184 P698 26083310 @default.
- Q53206184 P1433 Q2819067 @default.
- Q53206184 P1476 "Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage." @default.
- Q53206184 P2093 "Chul-Ho Lee" @default.
- Q53206184 P2093 "Fan Ye" @default.
- Q53206184 P2093 "Xu Cui" @default.
- Q53206184 P304 "7019-7026" @default.
- Q53206184 P31 Q13442814 @default.
- Q53206184 P356 "10.1021/ACSNANO.5B01341" @default.
- Q53206184 P407 Q1860 @default.
- Q53206184 P433 "7" @default.
- Q53206184 P478 "9" @default.
- Q53206184 P50 Q114410283 @default.