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- Q56626768 description "article" @default.
- Q56626768 description "artículu científicu" @default.
- Q56626768 description "wetenschappelijk artikel" @default.
- Q56626768 description "наукова стаття" @default.
- Q56626768 description "ലേഖനം" @default.
- Q56626768 name "Silicon nano-transistors and breaking the 10 nm physical gate length barrier" @default.
- Q56626768 name "Silicon nano-transistors and breaking the 10 nm physical gate length barrier" @default.
- Q56626768 type Item @default.
- Q56626768 label "Silicon nano-transistors and breaking the 10 nm physical gate length barrier" @default.
- Q56626768 label "Silicon nano-transistors and breaking the 10 nm physical gate length barrier" @default.
- Q56626768 prefLabel "Silicon nano-transistors and breaking the 10 nm physical gate length barrier" @default.
- Q56626768 prefLabel "Silicon nano-transistors and breaking the 10 nm physical gate length barrier" @default.
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- Q56626768 P31 Q56626768-BA827F29-0E8B-4060-A032-E088BC926A23 @default.
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- Q56626768 P921 Q56626768-DEB80E33-AE38-4755-871C-CF8E2D632A9A @default.
- Q56626768 P356 DRC.2003.1226901 @default.
- Q56626768 P1476 "Silicon nano-transistors and breaking the 10 nm physical gate length barrier" @default.
- Q56626768 P2093 "B. Doyle" @default.
- Q56626768 P2093 "B. Jin" @default.
- Q56626768 P2093 "J. Kavalieros" @default.
- Q56626768 P2093 "M. Doczy" @default.
- Q56626768 P2093 "M. Metz" @default.
- Q56626768 P2093 "R. Chau" @default.
- Q56626768 P2093 "S. Datta" @default.
- Q56626768 P2093 "S. Hareland" @default.
- Q56626768 P31 Q13442814 @default.
- Q56626768 P356 "10.1109/DRC.2003.1226901" @default.
- Q56626768 P921 Q11468 @default.