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- Q56852148 description "article" @default.
- Q56852148 description "wetenschappelijk artikel" @default.
- Q56852148 description "наукова стаття, опублікована в жовтні 2010" @default.
- Q56852148 description "ലേഖനം" @default.
- Q56852148 name "Characterization of developing source/drain current of carbon nanotube field-effect transistors with n-doping by polyethylene imine" @default.
- Q56852148 name "Characterization of developing source/drain current of carbon nanotube field-effect transistors with n-doping by polyethylene imine" @default.
- Q56852148 type Item @default.
- Q56852148 label "Characterization of developing source/drain current of carbon nanotube field-effect transistors with n-doping by polyethylene imine" @default.
- Q56852148 label "Characterization of developing source/drain current of carbon nanotube field-effect transistors with n-doping by polyethylene imine" @default.
- Q56852148 prefLabel "Characterization of developing source/drain current of carbon nanotube field-effect transistors with n-doping by polyethylene imine" @default.
- Q56852148 prefLabel "Characterization of developing source/drain current of carbon nanotube field-effect transistors with n-doping by polyethylene imine" @default.
- Q56852148 P1433 Q56852148-8100EAFD-1ED2-4450-84B6-4F9A9CD25D19 @default.
- Q56852148 P1476 Q56852148-CE60EC40-0DBD-46C3-8979-D1637C431A55 @default.
- Q56852148 P2093 Q56852148-5460EB36-6AB5-4F34-B17C-77305B792982 @default.
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- Q56852148 P304 Q56852148-8319E6C5-C6AA-461C-9164-AC7D2D4E92E9 @default.
- Q56852148 P31 Q56852148-2873485B-D3C3-4725-93C7-7F917515CB9A @default.
- Q56852148 P356 Q56852148-E0E4FF26-1B5D-499F-8262-D49BB0C2C82C @default.
- Q56852148 P433 Q56852148-9C3733B3-A877-4CD6-9571-28D919BCDBB5 @default.
- Q56852148 P478 Q56852148-5A5A1251-2079-432E-B446-B343FFB85825 @default.
- Q56852148 P577 Q56852148-AE1ADD68-67E2-432C-A748-EA664D42B494 @default.
- Q56852148 P921 Q56852148-554B00F7-CA0C-4164-B52E-B46BA7304A8C @default.
- Q56852148 P921 Q56852148-712C3291-7375-42EA-9C38-E6F580C38C43 @default.
- Q56852148 P356 J.MEE.2009.12.019 @default.
- Q56852148 P1433 Q2615776 @default.
- Q56852148 P1476 "Characterization of developing source/drain current of carbon nanotube field-effect transistors with n-doping by polyethylene imine" @default.
- Q56852148 P2093 "J.-W. John Cheng" @default.
- Q56852148 P2093 "Jeng-Rong Ho" @default.
- Q56852148 P2093 "Shiang-Kuo Chang-Jian" @default.
- Q56852148 P304 "1973-1977" @default.
- Q56852148 P31 Q13442814 @default.
- Q56852148 P356 "10.1016/J.MEE.2009.12.019" @default.
- Q56852148 P433 "10" @default.
- Q56852148 P478 "87" @default.
- Q56852148 P577 "2010-10-01T00:00:00Z" @default.
- Q56852148 P921 Q176097 @default.
- Q56852148 P921 Q1778729 @default.