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- Q56948600 description "article scientifique publié en 2003" @default.
- Q56948600 description "article" @default.
- Q56948600 description "im September 2003 veröffentlichter wissenschaftlicher Artikel" @default.
- Q56948600 description "wetenschappelijk artikel" @default.
- Q56948600 description "наукова стаття, опублікована у вересні 2003" @default.
- Q56948600 name "High-energy radiation effects on subthreshold characteristics, transconductance and mobility of n-channel MOSFETs" @default.
- Q56948600 name "High-energy radiation effects on subthreshold characteristics, transconductance and mobility of n-channel MOSFETs" @default.
- Q56948600 type Item @default.
- Q56948600 label "High-energy radiation effects on subthreshold characteristics, transconductance and mobility of n-channel MOSFETs" @default.
- Q56948600 label "High-energy radiation effects on subthreshold characteristics, transconductance and mobility of n-channel MOSFETs" @default.
- Q56948600 prefLabel "High-energy radiation effects on subthreshold characteristics, transconductance and mobility of n-channel MOSFETs" @default.
- Q56948600 prefLabel "High-energy radiation effects on subthreshold characteristics, transconductance and mobility of n-channel MOSFETs" @default.
- Q56948600 P1433 Q56948600-38814DC4-A515-4798-AA15-F8E7F42328FD @default.
- Q56948600 P1476 Q56948600-3B8C1FFC-021D-4DD3-8E99-D50A5FE07911 @default.
- Q56948600 P2093 Q56948600-3FA53574-70EA-4B5E-B20A-5E2C4D9E1572 @default.
- Q56948600 P2093 Q56948600-B124BEF0-5A7C-48BF-AC5F-23E08EF62B1C @default.
- Q56948600 P2093 Q56948600-C50C2D82-F482-4F9D-86EC-783E9341E92E @default.
- Q56948600 P304 Q56948600-5729AB9B-FDEE-4432-835A-DE22716CBD25 @default.
- Q56948600 P31 Q56948600-76A2FF5D-02A7-48D0-88C3-E0875A0CCAE9 @default.
- Q56948600 P356 Q56948600-C9FC3EB3-F333-45A7-A259-EB9D3288267F @default.
- Q56948600 P433 Q56948600-310E7351-E3D1-4B23-A1F3-E6DE78CF9497 @default.
- Q56948600 P478 Q56948600-F40B73C5-8D73-4962-B89B-88B535D7BCCA @default.
- Q56948600 P577 Q56948600-4BD6BF9C-92FD-4729-B6C4-02870D90321F @default.
- Q56948600 P356 307 @default.
- Q56948600 P1433 Q15708713 @default.
- Q56948600 P1476 "High-energy radiation effects on subthreshold characteristics, transconductance and mobility of n-channel MOSFETs" @default.
- Q56948600 P2093 "A P Gnana Prakash" @default.
- Q56948600 P2093 "K Siddappa" @default.
- Q56948600 P2093 "S C Ke" @default.
- Q56948600 P304 "1037-1042" @default.
- Q56948600 P31 Q13442814 @default.
- Q56948600 P356 "10.1088/0268-1242/18/12/307" @default.
- Q56948600 P433 "12" @default.
- Q56948600 P478 "18" @default.
- Q56948600 P577 "2003-09-17T00:00:00Z" @default.