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- Q57367879 description "article scientifique publié en 2015" @default.
- Q57367879 description "article" @default.
- Q57367879 description "wetenschappelijk artikel" @default.
- Q57367879 description "наукова стаття, опублікована у вересні 2015" @default.
- Q57367879 name "Electrically doped WTe 2 tunnel transistors" @default.
- Q57367879 name "Electrically doped WTe 2 tunnel transistors" @default.
- Q57367879 type Item @default.
- Q57367879 label "Electrically doped WTe 2 tunnel transistors" @default.
- Q57367879 label "Electrically doped WTe 2 tunnel transistors" @default.
- Q57367879 prefLabel "Electrically doped WTe 2 tunnel transistors" @default.
- Q57367879 prefLabel "Electrically doped WTe 2 tunnel transistors" @default.
- Q57367879 P1476 Q57367879-CB4ABB4F-D291-4CB7-8E49-A12808257B28 @default.
- Q57367879 P2093 Q57367879-5800E27E-0A21-4610-8A30-7112827E1055 @default.
- Q57367879 P31 Q57367879-4E3E4654-2104-4057-B3FA-75B751900B6E @default.
- Q57367879 P356 Q57367879-7A1230B9-F50D-40B2-A28F-6607B50E0258 @default.
- Q57367879 P50 Q57367879-80E6C594-0625-4A32-81A9-4A41E1D83C45 @default.
- Q57367879 P50 Q57367879-D1925328-B0B9-4191-AF86-FED513250695 @default.
- Q57367879 P50 Q57367879-EAA41DA4-1579-469B-A006-96C10E59F725 @default.
- Q57367879 P577 Q57367879-553F3607-C73F-4A2E-8284-52EFBFFD46EC @default.
- Q57367879 P356 SISPAD.2015.7292311 @default.
- Q57367879 P1476 "Electrically doped WTe 2 tunnel transistors" @default.
- Q57367879 P2093 "Joerg Appenzeller" @default.
- Q57367879 P31 Q13442814 @default.
- Q57367879 P356 "10.1109/SISPAD.2015.7292311" @default.
- Q57367879 P50 Q11176541 @default.
- Q57367879 P50 Q57154012 @default.
- Q57367879 P50 Q57465959 @default.
- Q57367879 P577 "2015-09-01T00:00:00Z" @default.