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- Q57389910 description "article scientifique publié en 2015" @default.
- Q57389910 description "article" @default.
- Q57389910 description "im Dezember 2015 veröffentlichter wissenschaftlicher Artikel" @default.
- Q57389910 description "wetenschappelijk artikel" @default.
- Q57389910 description "наукова стаття, опублікована в грудні 2015" @default.
- Q57389910 name "Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results" @default.
- Q57389910 name "Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results" @default.
- Q57389910 type Item @default.
- Q57389910 label "Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results" @default.
- Q57389910 label "Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results" @default.
- Q57389910 prefLabel "Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results" @default.
- Q57389910 prefLabel "Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results" @default.
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- Q57389910 P356 1.4937575 @default.
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- Q57389910 P1476 "Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results" @default.
- Q57389910 P2093 "D. Nilsson" @default.
- Q57389910 P2093 "J. Bergsten" @default.
- Q57389910 P2093 "U. Forsberg" @default.
- Q57389910 P2093 "X. Li" @default.
- Q57389910 P2860 Q57389918 @default.
- Q57389910 P304 "262105" @default.
- Q57389910 P31 Q13442814 @default.
- Q57389910 P356 "10.1063/1.4937575" @default.
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- Q57389910 P433 "26" @default.
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- Q57389910 P577 "2015-12-28T00:00:00Z" @default.