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- Q57389959 description "artículu científicu" @default.
- Q57389959 description "im Oktober 2012 veröffentlichter wissenschaftlicher Artikel" @default.
- Q57389959 description "wetenschappelijk artikel" @default.
- Q57389959 description "наукова стаття, опублікована в жовтні 2012" @default.
- Q57389959 name "Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC" @default.
- Q57389959 name "Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC" @default.
- Q57389959 type Item @default.
- Q57389959 label "Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC" @default.
- Q57389959 label "Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC" @default.
- Q57389959 prefLabel "Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC" @default.
- Q57389959 prefLabel "Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC" @default.
- Q57389959 P1433 Q57389959-97EB2417-E497-48F5-B4C8-75B637FB01A2 @default.
- Q57389959 P1476 Q57389959-3F18E6A5-5436-47E0-9650-F1D4308B8A51 @default.
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- Q57389959 P2093 Q57389959-AC87CFA0-CEB1-4DD1-9F56-3C4B8BB79909 @default.
- Q57389959 P2093 Q57389959-C4CF5C9B-B6FD-4B0C-8799-6897DE541BDA @default.
- Q57389959 P304 Q57389959-E1DB0DA0-CA49-4D0A-ACD2-2CAE68C261A1 @default.
- Q57389959 P31 Q57389959-44924C64-0AB5-4558-8478-906F74185C5A @default.
- Q57389959 P356 Q57389959-16A26CD7-BAF3-48EA-ABF3-696CF4D5FEF0 @default.
- Q57389959 P433 Q57389959-7365F260-8AFC-451B-A5FF-40DBEF409E03 @default.
- Q57389959 P478 Q57389959-4F443C48-092E-4FEE-9519-6FB2710E0A22 @default.
- Q57389959 P50 Q57389959-7DAEDBC8-D237-403E-9A5D-758A073E299F @default.
- Q57389959 P50 Q57389959-8DA3EB75-1778-4E9B-8265-858F1A77D608 @default.
- Q57389959 P50 Q57389959-C2EA990A-328F-4A80-BDAD-8788EA9CE071 @default.
- Q57389959 P50 Q57389959-D21FE0CE-772E-4231-B427-CCF56B0DA230 @default.
- Q57389959 P50 Q57389959-DE172DC8-D78D-40CB-B076-9DE441874398 @default.
- Q57389959 P577 Q57389959-6EF9C1B0-514D-4B50-95FC-49C5FECD4625 @default.
- Q57389959 P356 455301 @default.
- Q57389959 P1433 Q2587435 @default.
- Q57389959 P1476 "Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC" @default.
- Q57389959 P2093 "C G Hemmingsson" @default.
- Q57389959 P2093 "F C Beyer" @default.
- Q57389959 P2093 "J Isoya" @default.
- Q57389959 P2093 "N Morishita" @default.
- Q57389959 P304 "455301" @default.
- Q57389959 P31 Q13442814 @default.
- Q57389959 P356 "10.1088/0022-3727/45/45/455301" @default.
- Q57389959 P433 "45" @default.
- Q57389959 P478 "45" @default.
- Q57389959 P50 Q57319836 @default.
- Q57389959 P50 Q57385736 @default.
- Q57389959 P50 Q57390166 @default.
- Q57389959 P50 Q57390411 @default.
- Q57389959 P50 Q57390623 @default.
- Q57389959 P577 "2012-10-16T00:00:00Z" @default.