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- Q57437747 description "article scientifique publié en 2011" @default.
- Q57437747 description "article" @default.
- Q57437747 description "im Januar 2011 veröffentlichter wissenschaftlicher Artikel" @default.
- Q57437747 description "wetenschappelijk artikel" @default.
- Q57437747 description "наукова стаття, опублікована у 2011" @default.
- Q57437747 name "Characterization on Bandedge Electronic Structure of MgO Added Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] Gate Dielectrics for ZnO-Thin Film Transistors" @default.
- Q57437747 name "Characterization on Bandedge Electronic Structure of MgO Added Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] Gate Dielectrics for ZnO-Thin Film Transistors" @default.
- Q57437747 type Item @default.
- Q57437747 label "Characterization on Bandedge Electronic Structure of MgO Added Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] Gate Dielectrics for ZnO-Thin Film Transistors" @default.
- Q57437747 label "Characterization on Bandedge Electronic Structure of MgO Added Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] Gate Dielectrics for ZnO-Thin Film Transistors" @default.
- Q57437747 prefLabel "Characterization on Bandedge Electronic Structure of MgO Added Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] Gate Dielectrics for ZnO-Thin Film Transistors" @default.
- Q57437747 prefLabel "Characterization on Bandedge Electronic Structure of MgO Added Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] Gate Dielectrics for ZnO-Thin Film Transistors" @default.
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- Q57437747 P1476 "Characterization on Bandedge Electronic Structure of MgO Added Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] Gate Dielectrics for ZnO-Thin Film Transistors" @default.
- Q57437747 P2093 "Dong Hun Kim" @default.
- Q57437747 P2093 "Hyungtak Seo" @default.
- Q57437747 P2093 "Jinwoo Kim" @default.
- Q57437747 P2093 "Nam Gyu Cho" @default.
- Q57437747 P2860 Q47735611 @default.
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- Q57437747 P304 "G4" @default.
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- Q57437747 P356 "10.1149/1.3508481" @default.
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- Q57437747 P577 "2011-01-01T00:00:00Z" @default.
- Q57437747 P921 Q1137203 @default.