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- Q57441937 description "article scientifique publié en 2009" @default.
- Q57441937 description "article" @default.
- Q57441937 description "im Jahr 2009 veröffentlichter wissenschaftlicher Artikel" @default.
- Q57441937 description "wetenschappelijk artikel" @default.
- Q57441937 description "наукова стаття, опублікована в січні 2009" @default.
- Q57441937 name "Gate Stack Reliability of High-Mobility 4 H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric" @default.
- Q57441937 name "Gate Stack Reliability of High-Mobility 4 H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric" @default.
- Q57441937 type Item @default.
- Q57441937 label "Gate Stack Reliability of High-Mobility 4 H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric" @default.
- Q57441937 label "Gate Stack Reliability of High-Mobility 4 H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric" @default.
- Q57441937 prefLabel "Gate Stack Reliability of High-Mobility 4 H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric" @default.
- Q57441937 prefLabel "Gate Stack Reliability of High-Mobility 4 H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric" @default.
- Q57441937 P1433 Q57441937-0CEC22B1-3E4B-485E-94CB-55F4B3C47D9E @default.
- Q57441937 P1476 Q57441937-F7A0D02E-0279-485B-8B52-117AAE1A685A @default.
- Q57441937 P2093 Q57441937-24331250-080F-4DE8-AB9B-B0B97B5CBF53 @default.
- Q57441937 P2093 Q57441937-28108174-D482-44B8-BAD3-8FBAE3CE0D15 @default.
- Q57441937 P2093 Q57441937-2831D307-53BB-4993-BD4D-B9A5CAAE2250 @default.
- Q57441937 P2093 Q57441937-570DB5AC-EDF4-40A9-864E-4FA025E9BBC3 @default.
- Q57441937 P2093 Q57441937-A045ED93-033E-4F2A-B3A5-44783866D780 @default.
- Q57441937 P2860 Q57441937-391D3A2B-7EEC-4234-A647-40A3A8D1DA75 @default.
- Q57441937 P2860 Q57441937-745A67CC-B4B1-40C1-9200-166ECFCABC63 @default.
- Q57441937 P31 Q57441937-D19D3464-3EEB-4499-979C-A2DBB2B54871 @default.
- Q57441937 P356 Q57441937-BA058ECA-2065-41C5-8D67-60CAD3D55215 @default.
- Q57441937 P478 Q57441937-EC37ACDF-A5D2-477C-8794-AFDDEC491B42 @default.
- Q57441937 P577 Q57441937-1FFE092F-DD55-42EA-A74A-72CC0F02196C @default.
- Q57441937 P356 PROC-1195-B04-03 @default.
- Q57441937 P1433 Q26839757 @default.
- Q57441937 P1476 "Gate Stack Reliability of High-Mobility 4 H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric" @default.
- Q57441937 P2093 "Anant Agarwal" @default.
- Q57441937 P2093 "Daniel J Lichtenwalner" @default.
- Q57441937 P2093 "Sarit Dhar" @default.
- Q57441937 P2093 "Sei-Hyung Ryu" @default.
- Q57441937 P2093 "Veena Misra" @default.
- Q57441937 P2860 Q56952355 @default.
- Q57441937 P2860 Q58485531 @default.
- Q57441937 P31 Q13442814 @default.
- Q57441937 P356 "10.1557/PROC-1195-B04-03" @default.
- Q57441937 P478 "1195" @default.
- Q57441937 P577 "2009-01-01T00:00:00Z" @default.