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- Q57442025 description "im Juli 2014 veröffentlichter wissenschaftlicher Artikel" @default.
- Q57442025 description "wetenschappelijk artikel" @default.
- Q57442025 description "наукова стаття, опублікована в липні 2014" @default.
- Q57442025 name "Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode" @default.
- Q57442025 name "Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode" @default.
- Q57442025 type Item @default.
- Q57442025 label "Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode" @default.
- Q57442025 label "Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode" @default.
- Q57442025 prefLabel "Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode" @default.
- Q57442025 prefLabel "Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode" @default.
- Q57442025 P1433 Q57442025-4905B564-006B-4FEE-A544-9452B05D453F @default.
- Q57442025 P1476 Q57442025-BD64871A-45EE-4393-8ECA-71DD774CE708 @default.
- Q57442025 P2093 Q57442025-6307EE0C-9C30-44DC-A152-F23674F10CC2 @default.
- Q57442025 P2093 Q57442025-8A00DC75-671A-415A-9630-8588874E9D4C @default.
- Q57442025 P2093 Q57442025-A7F37411-3A5F-430D-815A-058A8AEFA4D0 @default.
- Q57442025 P2093 Q57442025-F65EF734-63CE-4083-83B0-E519C01F5523 @default.
- Q57442025 P304 Q57442025-C75D4CB7-5E42-4663-B237-7819ABE06D8E @default.
- Q57442025 P31 Q57442025-AF506B2C-9563-41CF-AC12-0C351D71F74C @default.
- Q57442025 P356 Q57442025-D9D3E9E8-5F97-428A-A6F2-37DAFD380AF5 @default.
- Q57442025 P433 Q57442025-DBE134D5-814D-48E4-9122-C508DC24ED88 @default.
- Q57442025 P478 Q57442025-977F039C-7610-488A-A2E8-18FE92F9A70B @default.
- Q57442025 P577 Q57442025-07D2226D-A4C8-4BEE-B3D6-5535BBC28D17 @default.
- Q57442025 P356 TIA.2014.2301865 @default.
- Q57442025 P1433 Q15751770 @default.
- Q57442025 P1476 "Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode" @default.
- Q57442025 P2093 "Ankan De" @default.
- Q57442025 P2093 "Awneesh Tripathi" @default.
- Q57442025 P2093 "Hesam Mirzaee" @default.
- Q57442025 P2093 "Subhashish Bhattacharya" @default.
- Q57442025 P304 "2728-2740" @default.
- Q57442025 P31 Q13442814 @default.
- Q57442025 P356 "10.1109/TIA.2014.2301865" @default.
- Q57442025 P433 "4" @default.
- Q57442025 P478 "50" @default.
- Q57442025 P577 "2014-07-01T00:00:00Z" @default.