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- Q57443749 description "article scientifique publié en 2005" @default.
- Q57443749 description "wetenschappelijk artikel" @default.
- Q57443749 description "наукова стаття, опублікована у вересні 2005" @default.
- Q57443749 name "A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation" @default.
- Q57443749 name "A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation" @default.
- Q57443749 type Item @default.
- Q57443749 label "A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation" @default.
- Q57443749 label "A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation" @default.
- Q57443749 prefLabel "A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation" @default.
- Q57443749 prefLabel "A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation" @default.
- Q57443749 P1433 Q57443749-558BB6AE-449A-4003-96D3-2673B0EB6985 @default.
- Q57443749 P1476 Q57443749-219A34C5-519E-4D48-AF9B-CF68012D40DD @default.
- Q57443749 P2093 Q57443749-184D3281-DC6B-41FD-AEDE-5A41CCD9A2D6 @default.
- Q57443749 P2093 Q57443749-32AE3ADF-66EF-412B-A879-0C515A4725F3 @default.
- Q57443749 P2093 Q57443749-A2F1726E-E389-4DC5-A701-CDF893A6257E @default.
- Q57443749 P2093 Q57443749-C944284F-3B08-404E-AA4B-F60E6A308773 @default.
- Q57443749 P2093 Q57443749-DB44C888-7FCE-414F-8642-712F804E28C2 @default.
- Q57443749 P2093 Q57443749-E6E94492-2E8A-4320-8E9F-C9F7336D0678 @default.
- Q57443749 P304 Q57443749-6C4EA363-C169-4F1B-861C-99EA63866337 @default.
- Q57443749 P31 Q57443749-642B9056-15C7-404A-A341-F7415E170DA4 @default.
- Q57443749 P356 Q57443749-F760DDBE-C64C-4063-A4BA-473F9631712C @default.
- Q57443749 P433 Q57443749-759D7AA0-404B-446F-9FB6-B21B2D30B4C3 @default.
- Q57443749 P478 Q57443749-0D42D58D-9200-4B5C-A41F-EC03195430F5 @default.
- Q57443749 P50 Q57443749-68879D5C-84A0-449B-B14C-F2AAAC403882 @default.
- Q57443749 P50 Q57443749-D86DA25C-095D-4529-B88C-77438F824F0F @default.
- Q57443749 P577 Q57443749-6F0DAF39-C65A-46FE-9296-3CB6CB4763BB @default.
- Q57443749 P356 TNANO.2005.851426 @default.
- Q57443749 P1433 Q2683138 @default.
- Q57443749 P1476 "A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation" @default.
- Q57443749 P2093 "J. Zhang" @default.
- Q57443749 P2093 "L.-E. Wernersson" @default.
- Q57443749 P2093 "S. Kabeer" @default.
- Q57443749 P2093 "T.H. Kosel" @default.
- Q57443749 P2093 "V. Zela" @default.
- Q57443749 P2093 "W. Seifert" @default.
- Q57443749 P304 "594-598" @default.
- Q57443749 P31 Q13442814 @default.
- Q57443749 P356 "10.1109/TNANO.2005.851426" @default.
- Q57443749 P433 "5" @default.
- Q57443749 P478 "4" @default.
- Q57443749 P50 Q43680477 @default.
- Q57443749 P50 Q57428317 @default.
- Q57443749 P577 "2005-09-01T00:00:00Z" @default.