Matches in Wikidata for { <http://www.wikidata.org/entity/Q57585356> ?p ?o ?g. }
Showing items 1 to 45 of
45
with 100 items per page.
- Q57585356 description "article scientifique publié en 2008" @default.
- Q57585356 description "article" @default.
- Q57585356 description "im Januar 2008 veröffentlichter wissenschaftlicher Artikel" @default.
- Q57585356 description "wetenschappelijk artikel" @default.
- Q57585356 description "наукова стаття, опублікована в січні 2008" @default.
- Q57585356 name "Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric" @default.
- Q57585356 name "Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric" @default.
- Q57585356 type Item @default.
- Q57585356 label "Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric" @default.
- Q57585356 label "Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric" @default.
- Q57585356 prefLabel "Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric" @default.
- Q57585356 prefLabel "Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric" @default.
- Q57585356 P1433 Q57585356-C4CA8D14-3E36-47EB-B0A7-E17922A1D609 @default.
- Q57585356 P1476 Q57585356-5803493F-3365-4860-B42F-D48BD36E2EE5 @default.
- Q57585356 P2093 Q57585356-3283BE29-DD4E-4DAD-A0AD-D5A705708F4E @default.
- Q57585356 P2093 Q57585356-709A8145-89CB-4123-9F2D-53DD37FCD007 @default.
- Q57585356 P2093 Q57585356-840C6117-27A9-4965-9337-54C6BC4DA440 @default.
- Q57585356 P2093 Q57585356-EA5B72AD-F7E0-43DD-9339-059A346EA018 @default.
- Q57585356 P2860 Q57585356-96841D59-7564-4445-906B-8140C3E755F0 @default.
- Q57585356 P2860 Q57585356-C1B46FE0-0D50-4B1F-A2DD-954BC085C69E @default.
- Q57585356 P304 Q57585356-3CF622B0-A3F1-4CEC-931D-A77E1014D0E8 @default.
- Q57585356 P31 Q57585356-96E33664-A151-4B6A-9649-757EFBD70B98 @default.
- Q57585356 P356 Q57585356-AEF24E33-8E05-41F1-A007-C7B1B97DE3E5 @default.
- Q57585356 P433 Q57585356-FCD53267-30EA-4C81-8CC0-48BFDDF0D624 @default.
- Q57585356 P478 Q57585356-24C06B9D-6DD8-4055-871F-C38171231B6D @default.
- Q57585356 P50 Q57585356-7429052D-3AB3-4732-B3FB-67EF25DCD787 @default.
- Q57585356 P50 Q57585356-F98C5406-FC45-4BB9-95C5-BE8810344565 @default.
- Q57585356 P577 Q57585356-E3D872AB-D017-47C6-9260-7C8A0599236C @default.
- Q57585356 P356 J.TSF.2007.06.048 @default.
- Q57585356 P1433 Q2062139 @default.
- Q57585356 P1476 "Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric" @default.
- Q57585356 P2093 "P. Srinivas" @default.
- Q57585356 P2093 "S. Shriram" @default.
- Q57585356 P2093 "S.G. Mhaisalkar" @default.
- Q57585356 P2093 "S.P. Tiwari" @default.
- Q57585356 P2860 Q56047236 @default.
- Q57585356 P2860 Q57585549 @default.
- Q57585356 P304 "770-772" @default.
- Q57585356 P31 Q13442814 @default.
- Q57585356 P356 "10.1016/J.TSF.2007.06.048" @default.
- Q57585356 P433 "5" @default.
- Q57585356 P478 "516" @default.
- Q57585356 P50 Q125311244 @default.
- Q57585356 P50 Q16959779 @default.
- Q57585356 P577 "2008-01-01T00:00:00Z" @default.