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- Q57585390 description "article scientifique publié en 2007" @default.
- Q57585390 description "article" @default.
- Q57585390 description "im März 2007 veröffentlichter wissenschaftlicher Artikel" @default.
- Q57585390 description "wetenschappelijk artikel" @default.
- Q57585390 description "наукова стаття, опублікована в березні 2007" @default.
- Q57585390 name "Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer" @default.
- Q57585390 name "Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer" @default.
- Q57585390 type Item @default.
- Q57585390 label "Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer" @default.
- Q57585390 label "Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer" @default.
- Q57585390 prefLabel "Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer" @default.
- Q57585390 prefLabel "Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer" @default.
- Q57585390 P1433 Q57585390-11431339-E0ED-4908-AD5C-78C59D862D56 @default.
- Q57585390 P1476 Q57585390-2065ACB0-C5FE-4857-8EEA-37FD1CC2BB9A @default.
- Q57585390 P2093 Q57585390-0983DFCA-1C9C-4248-9D5D-EEF92B764C02 @default.
- Q57585390 P2093 Q57585390-0E447D30-F269-4101-A547-44364F038C49 @default.
- Q57585390 P2093 Q57585390-31CE806C-4B3B-48D1-BC31-F2A6AF549F92 @default.
- Q57585390 P2093 Q57585390-5504D4EA-0E6B-467E-AAB5-BBFF8AE2A867 @default.
- Q57585390 P2093 Q57585390-84D77E51-FBA1-4524-95D3-E70F27333E63 @default.
- Q57585390 P2093 Q57585390-943F5D2E-714F-4BC1-BBC6-AF1D9CAA561D @default.
- Q57585390 P2093 Q57585390-97172D65-7740-43C8-B1B5-8408D045E9ED @default.
- Q57585390 P2093 Q57585390-B4446659-757F-434D-88FC-404330288BDB @default.
- Q57585390 P2093 Q57585390-C3660C63-5216-4508-8146-10099988FB22 @default.
- Q57585390 P2093 Q57585390-D93768B3-30B5-464C-BDBF-10784BCD7C40 @default.
- Q57585390 P304 Q57585390-9686AFE4-6226-4119-B7DD-02660AA5CF5B @default.
- Q57585390 P31 Q57585390-38E6C3D5-7AD5-4DEF-B710-C4C799CBFA31 @default.
- Q57585390 P356 Q57585390-75C3B555-468E-4AB5-9B55-4218343338B9 @default.
- Q57585390 P407 Q57585390-E9A526FA-B292-4139-8DC2-E8EBB9D31F89 @default.
- Q57585390 P433 Q57585390-4EFE4D4D-80D7-43A0-8234-313C2505F072 @default.
- Q57585390 P478 Q57585390-F8F8B426-ABF0-4145-9556-63FE1DE5CA77 @default.
- Q57585390 P577 Q57585390-6F5B1FBF-2766-4223-B69C-767BCCD544CE @default.
- Q57585390 P921 Q57585390-CCA73B17-2810-4451-B00F-FCDB180F939F @default.
- Q57585390 P356 1.2715030 @default.
- Q57585390 P1433 Q621615 @default.
- Q57585390 P1476 "Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer" @default.
- Q57585390 P2093 "C. M. Ng" @default.
- Q57585390 P2093 "F. Boey" @default.
- Q57585390 P2093 "G. J. Qi" @default.
- Q57585390 P2093 "J. N. Tey" @default.
- Q57585390 P2093 "R. Lal" @default.
- Q57585390 P2093 "S. G. Mhaisalkar" @default.
- Q57585390 P2093 "T. Cahyadi" @default.
- Q57585390 P2093 "V. R. Rao" @default.
- Q57585390 P2093 "Z. H. Huang" @default.
- Q57585390 P2093 "Z.-K. Chen" @default.
- Q57585390 P304 "122112" @default.
- Q57585390 P31 Q13442814 @default.
- Q57585390 P356 "10.1063/1.2715030" @default.
- Q57585390 P407 Q1860 @default.
- Q57585390 P433 "12" @default.
- Q57585390 P478 "90" @default.
- Q57585390 P577 "2007-03-19T00:00:00Z" @default.
- Q57585390 P921 Q176097 @default.