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- Q57617061 description "article scientifique publié en 2010" @default.
- Q57617061 description "article" @default.
- Q57617061 description "im Januar 2010 veröffentlichter wissenschaftlicher Artikel" @default.
- Q57617061 description "wetenschappelijk artikel" @default.
- Q57617061 description "наукова стаття, опублікована у 2010" @default.
- Q57617061 name "Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors" @default.
- Q57617061 name "Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors" @default.
- Q57617061 type Item @default.
- Q57617061 label "Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors" @default.
- Q57617061 label "Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors" @default.
- Q57617061 prefLabel "Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors" @default.
- Q57617061 prefLabel "Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors" @default.
- Q57617061 P1433 Q57617061-7F4DBF62-A938-4B7B-AA8B-DADDF0CD35AF @default.
- Q57617061 P1476 Q57617061-06B2773A-B103-4FEA-899F-877341F60549 @default.
- Q57617061 P2093 Q57617061-2165B6E2-EFCC-43D1-9F77-FB94556B4C94 @default.
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- Q57617061 P2093 Q57617061-F7213482-A851-4B54-B5CF-16BFA0C6A4B0 @default.
- Q57617061 P2860 Q57617061-5436C834-3FCD-41DF-ABE3-CC2306C17ADE @default.
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- Q57617061 P31 Q57617061-A31E017D-BFA5-477B-9ABA-42BB4C1655BF @default.
- Q57617061 P356 Q57617061-DAFF2367-65F5-4E2B-96B9-8C41D94EF562 @default.
- Q57617061 P433 Q57617061-5097BFF9-7F4C-4B67-A83C-09F001642EC8 @default.
- Q57617061 P478 Q57617061-767B1BFA-1D78-4DED-806D-B9F83BF36194 @default.
- Q57617061 P577 Q57617061-66A6EE26-19DD-4AAC-BA87-92F8176B39E8 @default.
- Q57617061 P921 Q57617061-D33872E5-C76E-42C2-8B8C-C3EB7A61E913 @default.
- Q57617061 P356 1.3474606 @default.
- Q57617061 P1433 Q3050583 @default.
- Q57617061 P1476 "Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors" @default.
- Q57617061 P2093 "Byeong-Soo Bae" @default.
- Q57617061 P2093 "Seok-Jun Seo" @default.
- Q57617061 P2093 "Young Hwan Hwang" @default.
- Q57617061 P2860 Q33983345 @default.
- Q57617061 P2860 Q38485795 @default.
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- Q57617061 P2860 Q39864723 @default.
- Q57617061 P2860 Q57617076 @default.
- Q57617061 P2860 Q57617081 @default.
- Q57617061 P304 "H357" @default.
- Q57617061 P31 Q13442814 @default.
- Q57617061 P356 "10.1149/1.3474606" @default.
- Q57617061 P433 "10" @default.
- Q57617061 P478 "13" @default.
- Q57617061 P577 "2010-01-01T00:00:00Z" @default.
- Q57617061 P921 Q1137203 @default.