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- Q57633307 description "article published in 2009" @default.
- Q57633307 description "wetenschappelijk artikel" @default.
- Q57633307 description "наукова стаття, опублікована в березні 2009" @default.
- Q57633307 name "Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm range" @default.
- Q57633307 name "Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm range" @default.
- Q57633307 type Item @default.
- Q57633307 label "Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm range" @default.
- Q57633307 label "Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm range" @default.
- Q57633307 prefLabel "Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm range" @default.
- Q57633307 prefLabel "Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm range" @default.
- Q57633307 P1433 Q57633307-ED9449B4-9631-4269-B24A-C2216F0CB146 @default.
- Q57633307 P1476 Q57633307-D89C0437-8D9E-4C5D-BE99-34AD8C69FDCB @default.
- Q57633307 P2093 Q57633307-0371CEC0-3B91-4D83-9496-3E7D8F4AC7A9 @default.
- Q57633307 P2093 Q57633307-06640EE0-662D-4111-838F-C329445F76C5 @default.
- Q57633307 P2093 Q57633307-437A6871-B3DF-4365-B06F-73A63BB3B6D6 @default.
- Q57633307 P2093 Q57633307-958603E1-23A6-49B1-B291-25CC6D03F8CC @default.
- Q57633307 P2093 Q57633307-FC1D0DB6-9568-47A0-B379-55083B6C414F @default.
- Q57633307 P304 Q57633307-39877C91-B155-4F51-B8FC-61E760EF09B2 @default.
- Q57633307 P31 Q57633307-4995E99A-ACF2-4705-8732-EB4177620676 @default.
- Q57633307 P356 Q57633307-E559F273-39EF-468A-9466-984CB2EB1B93 @default.
- Q57633307 P433 Q57633307-2EF13B63-F1AC-4FDD-B805-64441F9BBF74 @default.
- Q57633307 P478 Q57633307-69D9400C-CBC2-45EF-801B-E47C134487EC @default.
- Q57633307 P577 Q57633307-2FCFDE03-AD47-4DD5-9200-7C6554BB6C77 @default.
- Q57633307 P356 J.JCRYSGRO.2008.10.037 @default.
- Q57633307 P1433 Q1929756 @default.
- Q57633307 P1476 "Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm range" @default.
- Q57633307 P2093 "A.Z. Li" @default.
- Q57633307 P2093 "K. Wang" @default.
- Q57633307 P2093 "Y. Gu" @default.
- Q57633307 P2093 "Y.G. Zhang" @default.
- Q57633307 P2093 "Y.Y. Li" @default.
- Q57633307 P304 "1935-1938" @default.
- Q57633307 P31 Q13442814 @default.
- Q57633307 P356 "10.1016/J.JCRYSGRO.2008.10.037" @default.
- Q57633307 P433 "7" @default.
- Q57633307 P478 "311" @default.
- Q57633307 P577 "2009-03-01T00:00:00Z" @default.