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- Q57696969 description "article scientifique publié en 1995" @default.
- Q57696969 description "wetenschappelijk artikel" @default.
- Q57696969 description "наукова стаття, опублікована в березні 1995" @default.
- Q57696969 name "Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers" @default.
- Q57696969 name "Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers" @default.
- Q57696969 type Item @default.
- Q57696969 label "Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers" @default.
- Q57696969 label "Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers" @default.
- Q57696969 prefLabel "Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers" @default.
- Q57696969 prefLabel "Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers" @default.
- Q57696969 P1433 Q57696969-E97E1A00-05E9-4096-9A25-E4873283BC2C @default.
- Q57696969 P1476 Q57696969-9D5EEAA9-712C-4478-A68C-11D8D12C4447 @default.
- Q57696969 P2093 Q57696969-4D638421-C99B-4F84-B0CC-B50FA3CD961F @default.
- Q57696969 P2093 Q57696969-51DD8080-1239-433A-8118-33C1D9187D6B @default.
- Q57696969 P2093 Q57696969-6ED1F2D8-46F6-48C6-85F9-85A681EF3654 @default.
- Q57696969 P2093 Q57696969-93A88617-0731-44DD-981B-01CD9D557257 @default.
- Q57696969 P2093 Q57696969-95B1147A-3DED-49A6-BB3B-7072080C2D97 @default.
- Q57696969 P2093 Q57696969-C40180E4-E0A1-4BF0-AF28-D40F7FD4E256 @default.
- Q57696969 P304 Q57696969-05D82E3A-E944-4E5E-9B49-FA27410FE5FE @default.
- Q57696969 P31 Q57696969-A81CC9E6-C52A-462F-B0B7-F7F608F5824E @default.
- Q57696969 P356 Q57696969-4B0B5ADC-D69A-46E8-B58B-F0D8165D57B5 @default.
- Q57696969 P433 Q57696969-D7E4F59A-9108-405D-8047-5C0B71235B42 @default.
- Q57696969 P478 Q57696969-8F4FD62E-9A97-4B7A-AAB0-85FBBAC3A0AA @default.
- Q57696969 P577 Q57696969-B2010AFF-704E-4292-AA72-5E55F54C2066 @default.
- Q57696969 P356 0022-0248(94)00646-6 @default.
- Q57696969 P1433 Q1929756 @default.
- Q57696969 P1476 "Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers" @default.
- Q57696969 P2093 "A. Figueras" @default.
- Q57696969 P2093 "B. Armas" @default.
- Q57696969 P2093 "C. Combescure" @default.
- Q57696969 P2093 "R. Rodríguez-Clemente" @default.
- Q57696969 P2093 "S. Veintemillas" @default.
- Q57696969 P2093 "V. Madigou" @default.
- Q57696969 P304 "390-395" @default.
- Q57696969 P31 Q13442814 @default.
- Q57696969 P356 "10.1016/0022-0248(94)00646-6" @default.
- Q57696969 P433 "4" @default.
- Q57696969 P478 "148" @default.
- Q57696969 P577 "1995-03-01T00:00:00Z" @default.