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- Q57707599 description "im August 2018 veröffentlichter wissenschaftlicher Artikel" @default.
- Q57707599 description "wetenschappelijk artikel" @default.
- Q57707599 description "наукова стаття, опублікована в серпні 2018" @default.
- Q57707599 name "Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride" @default.
- Q57707599 name "Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride" @default.
- Q57707599 type Item @default.
- Q57707599 label "Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride" @default.
- Q57707599 label "Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride" @default.
- Q57707599 prefLabel "Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride" @default.
- Q57707599 prefLabel "Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride" @default.
- Q57707599 P1433 Q57707599-58056374-9AEC-4B70-9395-956134687334 @default.
- Q57707599 P1476 Q57707599-5FF7B5A5-47CE-4589-933A-E072F95F01B4 @default.
- Q57707599 P2093 Q57707599-0BC9ACAB-7013-4E46-BE3C-57E5ECD009F6 @default.
- Q57707599 P2093 Q57707599-3E8CE575-3795-406C-80DF-85630CD85175 @default.
- Q57707599 P2093 Q57707599-6DC9E1C7-CF9F-44AB-A961-8646F2FC5CB2 @default.
- Q57707599 P2093 Q57707599-CA91B045-22B4-4DA3-B118-BEEF01E67FD5 @default.
- Q57707599 P2093 Q57707599-D7761949-03F6-4A6A-8531-750AB5373EF7 @default.
- Q57707599 P2093 Q57707599-E9C37704-1ED9-4F96-B365-49BA15BE44C0 @default.
- Q57707599 P304 Q57707599-004865CC-8593-4F62-8A14-F563301FF5D3 @default.
- Q57707599 P31 Q57707599-38FFFDB8-BE0B-4811-837E-91425CF6B9B0 @default.
- Q57707599 P356 Q57707599-A5652C86-4557-4562-8920-89DA017DFD95 @default.
- Q57707599 P433 Q57707599-7D4EB647-3C9F-434C-B8EC-653EB8283E03 @default.
- Q57707599 P478 Q57707599-BDDAD99F-07B9-4555-8C69-0C52CAE96F87 @default.
- Q57707599 P577 Q57707599-D7761504-23CB-46F1-AEC3-1C4DDFE8E384 @default.
- Q57707599 P356 APEX.11.091001 @default.
- Q57707599 P1433 Q1908015 @default.
- Q57707599 P1476 "Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride" @default.
- Q57707599 P2093 "Fumimasa Horikiri" @default.
- Q57707599 P2093 "Hiroshi Ohta" @default.
- Q57707599 P2093 "Naomi Asai" @default.
- Q57707599 P2093 "Takehiro Yoshida" @default.
- Q57707599 P2093 "Tomoyoshi Mishima" @default.
- Q57707599 P2093 "Yoshinobu Narita" @default.
- Q57707599 P304 "091001" @default.
- Q57707599 P31 Q13442814 @default.
- Q57707599 P356 "10.7567/APEX.11.091001" @default.
- Q57707599 P433 "9" @default.
- Q57707599 P478 "11" @default.
- Q57707599 P577 "2018-08-10T00:00:00Z" @default.