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- Q57901355 description "article scientifique publié en 2016" @default.
- Q57901355 description "wetenschappelijk artikel" @default.
- Q57901355 description "наукова стаття, опублікована в лютому 2016" @default.
- Q57901355 name "Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors" @default.
- Q57901355 name "Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors" @default.
- Q57901355 type Item @default.
- Q57901355 label "Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors" @default.
- Q57901355 label "Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors" @default.
- Q57901355 prefLabel "Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors" @default.
- Q57901355 prefLabel "Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors" @default.
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- Q57901355 P478 Q57901355-3A9FDA4F-D3E2-4F47-AF4E-60BE38AB40D2 @default.
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- Q57901355 P921 Q57901355-5629C36A-FC90-4552-ABBD-011B289CFE2D @default.
- Q57901355 P356 FMATS.2016.00005 @default.
- Q57901355 P1433 Q50816567 @default.
- Q57901355 P1476 "Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors" @default.
- Q57901355 P2093 "Kuo-Ching Yang" @default.
- Q57901355 P2093 "Pei-Wen Li" @default.
- Q57901355 P2093 "Po-Hsiang Liao" @default.
- Q57901355 P2093 "Tom George" @default.
- Q57901355 P2093 "Wei-Ting Lai" @default.
- Q57901355 P2860 Q33535740 @default.
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- Q57901355 P2860 Q59067090 @default.
- Q57901355 P31 Q13442814 @default.
- Q57901355 P356 "10.3389/FMATS.2016.00005" @default.
- Q57901355 P478 "3" @default.
- Q57901355 P577 "2016-02-11T00:00:00Z" @default.
- Q57901355 P921 Q609408 @default.