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- Q58072557 description "article scientifique publié en 2014" @default.
- Q58072557 description "article" @default.
- Q58072557 description "wetenschappelijk artikel" @default.
- Q58072557 description "наукова стаття, опублікована в грудні 2014" @default.
- Q58072557 name "Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors" @default.
- Q58072557 name "Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors" @default.
- Q58072557 type Item @default.
- Q58072557 label "Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors" @default.
- Q58072557 label "Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors" @default.
- Q58072557 prefLabel "Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors" @default.
- Q58072557 prefLabel "Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors" @default.
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- Q58072557 P1476 Q58072557-8C8BD15C-40AB-4F9F-BD31-94D876D16889 @default.
- Q58072557 P2093 Q58072557-12699AEC-BA4C-459F-995E-7757F779CACE @default.
- Q58072557 P2093 Q58072557-19806152-58B6-41F9-941D-114BEACE959C @default.
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- Q58072557 P304 Q58072557-08228FA6-B950-41EA-9A44-D7D64D3561A6 @default.
- Q58072557 P31 Q58072557-CD84D7A7-E09C-42D8-BF5E-AF8155DC8DFC @default.
- Q58072557 P356 Q58072557-C00DA488-AA49-4BB0-8E58-AA719C2649B5 @default.
- Q58072557 P433 Q58072557-CBE446C6-A38B-4722-AFBC-4D4F2021AF0F @default.
- Q58072557 P478 Q58072557-64B73ADA-153B-4563-84A7-41518036E8F8 @default.
- Q58072557 P50 Q58072557-5A18243D-BEA9-497F-BE51-B7CBD5878107 @default.
- Q58072557 P577 Q58072557-4168BE72-44A2-405C-8806-98C9A64EB931 @default.
- Q58072557 P921 Q58072557-14240788-3AF2-414E-B9B5-5CE494F8C806 @default.
- Q58072557 P356 J.CAP.2014.10.019 @default.
- Q58072557 P1433 Q2296626 @default.
- Q58072557 P1476 "Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors" @default.
- Q58072557 P2093 "Byung Jun Jung" @default.
- Q58072557 P2093 "Chung Kun Song" @default.
- Q58072557 P2093 "Seokgeun Jin" @default.
- Q58072557 P304 "1809-1812" @default.
- Q58072557 P31 Q13442814 @default.
- Q58072557 P356 "10.1016/J.CAP.2014.10.019" @default.
- Q58072557 P433 "12" @default.
- Q58072557 P478 "14" @default.
- Q58072557 P50 Q50214120 @default.
- Q58072557 P577 "2014-12-01T00:00:00Z" @default.
- Q58072557 P921 Q176097 @default.