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- Q58199022 description "article scientifique publié en 2009" @default.
- Q58199022 description "article" @default.
- Q58199022 description "im Dezember 2009 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58199022 description "wetenschappelijk artikel" @default.
- Q58199022 description "наукова стаття, опублікована в грудні 2009" @default.
- Q58199022 name "Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors" @default.
- Q58199022 name "Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors" @default.
- Q58199022 type Item @default.
- Q58199022 label "Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors" @default.
- Q58199022 label "Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors" @default.
- Q58199022 prefLabel "Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors" @default.
- Q58199022 prefLabel "Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors" @default.
- Q58199022 P1433 Q58199022-79B739B2-332D-493D-8CE2-1805C4C00EDD @default.
- Q58199022 P1476 Q58199022-8603CC69-089A-4016-9ED3-ACF1615C326F @default.
- Q58199022 P2093 Q58199022-DF788E6F-2136-451C-94A5-F799BF1FAF2C @default.
- Q58199022 P2093 Q58199022-E0519407-251F-49B4-88F9-53E7AF2FD444 @default.
- Q58199022 P2093 Q58199022-E085D478-2E4B-4DDC-AC9F-B0C7198DDEEB @default.
- Q58199022 P2093 Q58199022-F001DC4A-0C54-48EE-9AAF-3B5EC2CF6FC7 @default.
- Q58199022 P304 Q58199022-EAC6413B-2DAB-453F-AB39-EC1846316038 @default.
- Q58199022 P31 Q58199022-D263A864-13EC-4EB1-8B5A-2AF893B89E12 @default.
- Q58199022 P356 Q58199022-5BD621C0-EE1C-4A57-B449-5D1536231F50 @default.
- Q58199022 P433 Q58199022-B1248847-3CFD-4617-ABF0-E028192250E4 @default.
- Q58199022 P478 Q58199022-AECF200E-4216-4C34-B7DB-205F930FB783 @default.
- Q58199022 P577 Q58199022-E0F8A9AE-FD22-4930-8BCF-5D0BE8B5A13B @default.
- Q58199022 P921 Q58199022-4B1FE975-3581-4B7B-BDF4-9EC2A7F7507B @default.
- Q58199022 P356 J.PHYSB.2009.08.171 @default.
- Q58199022 P1433 Q3417272 @default.
- Q58199022 P1476 "Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors" @default.
- Q58199022 P2093 "Chang Ho Woo" @default.
- Q58199022 P2093 "Cheol Hyoun Ahn" @default.
- Q58199022 P2093 "Dong Kyu Seo" @default.
- Q58199022 P2093 "Hyung Koun Cho" @default.
- Q58199022 P304 "4835-4838" @default.
- Q58199022 P31 Q13442814 @default.
- Q58199022 P356 "10.1016/J.PHYSB.2009.08.171" @default.
- Q58199022 P433 "23-24" @default.
- Q58199022 P478 "404" @default.
- Q58199022 P577 "2009-12-01T00:00:00Z" @default.
- Q58199022 P921 Q1137203 @default.