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- Q58332891 description "article scientifique publié en 2011" @default.
- Q58332891 description "im Januar 2011 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58332891 description "wetenschappelijk artikel" @default.
- Q58332891 description "наукова стаття, опублікована в січні 2011" @default.
- Q58332891 name "Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers" @default.
- Q58332891 name "Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers" @default.
- Q58332891 type Item @default.
- Q58332891 label "Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers" @default.
- Q58332891 label "Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers" @default.
- Q58332891 prefLabel "Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers" @default.
- Q58332891 prefLabel "Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers" @default.
- Q58332891 P1433 Q58332891-5F8D988C-5F2E-4971-9AEA-CD5F405FAD6F @default.
- Q58332891 P1476 Q58332891-7F5C4826-DF07-4130-9765-EAC3625EC75C @default.
- Q58332891 P2093 Q58332891-16A56425-5A51-4EE0-BDE3-F198D5BD4BFC @default.
- Q58332891 P2093 Q58332891-1C785A91-ECAB-46D5-83B8-DE38EB02DDC7 @default.
- Q58332891 P2093 Q58332891-237D5A30-D3E6-402A-9652-241036BEE65E @default.
- Q58332891 P2093 Q58332891-348A9A4F-89D9-41BE-A808-5EE4446BEEC4 @default.
- Q58332891 P2093 Q58332891-48F2304E-C6E1-4033-B1B3-7F5DAB992EEC @default.
- Q58332891 P2093 Q58332891-523DE756-88D9-41D2-8328-C36F7234E4D0 @default.
- Q58332891 P2093 Q58332891-6BFA6ABA-BEE1-47E7-8B95-EDBAA5C8CBDB @default.
- Q58332891 P2093 Q58332891-8D96703F-3189-4903-9223-B0E01D0CA100 @default.
- Q58332891 P2093 Q58332891-F8C418E0-7BF2-4321-AA52-453F6EFC10E0 @default.
- Q58332891 P2860 Q58332891-0CB26B5F-A55F-4F78-9A28-A4AA1892642C @default.
- Q58332891 P2860 Q58332891-218E07AC-1453-432E-8FA1-FD13C98B57B8 @default.
- Q58332891 P2860 Q58332891-22C9A586-CA24-4FCF-A979-E7628074AF58 @default.
- Q58332891 P2860 Q58332891-3DFE496A-383C-4814-8BE7-986E11B7C666 @default.
- Q58332891 P2860 Q58332891-D4AE234B-63B3-49A9-A9A2-2907CAF54242 @default.
- Q58332891 P304 Q58332891-9092B798-0522-4F13-8CAB-46016A9F6729 @default.
- Q58332891 P31 Q58332891-103169B8-CE03-4D32-9F22-E6943FE9C6F9 @default.
- Q58332891 P356 Q58332891-56D071EC-3B9C-4625-B9D3-2C896483D889 @default.
- Q58332891 P433 Q58332891-F6CE502C-A158-493D-A34A-D45556206015 @default.
- Q58332891 P478 Q58332891-572FF11F-A265-4FF1-9C3A-901518EEB625 @default.
- Q58332891 P577 Q58332891-6757E3BB-A024-4FFE-A6BE-B506AC48F83E @default.
- Q58332891 P356 PSSA.201026490 @default.
- Q58332891 P1433 Q2032547 @default.
- Q58332891 P1476 "Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers" @default.
- Q58332891 P2093 "Daisuke Takeuchi" @default.
- Q58332891 P2093 "Hideyo Okushi" @default.
- Q58332891 P2093 "Hiromitsu Kato" @default.
- Q58332891 P2093 "Kazuhiro Oyama" @default.
- Q58332891 P2093 "Masahiko Ogura" @default.
- Q58332891 P2093 "Norio Tokuda" @default.
- Q58332891 P2093 "Satoshi Yamasaki" @default.
- Q58332891 P2093 "Sung-Gi Ri" @default.
- Q58332891 P2093 "Toshiharu Makino" @default.
- Q58332891 P2860 Q58332922 @default.
- Q58332891 P2860 Q58332930 @default.
- Q58332891 P2860 Q58332945 @default.
- Q58332891 P2860 Q58332947 @default.
- Q58332891 P2860 Q58332976 @default.
- Q58332891 P304 "937-942" @default.
- Q58332891 P31 Q13442814 @default.
- Q58332891 P356 "10.1002/PSSA.201026490" @default.
- Q58332891 P433 "4" @default.
- Q58332891 P478 "208" @default.
- Q58332891 P577 "2011-01-07T00:00:00Z" @default.