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- Q58332979 description "2007 ഫെബ്രുവരി 1 നു പ്രസിദ്ധീകരിച്ച ശാസ്ത്ര ലേഖനം" @default.
- Q58332979 description "article published in 2007" @default.
- Q58332979 description "im Februar 2007 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58332979 description "wetenschappelijk artikel" @default.
- Q58332979 description "наукова стаття, опублікована в лютому 2007" @default.
- Q58332979 name "The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth — Study of surface morphology" @default.
- Q58332979 name "The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth — Study of surface morphology" @default.
- Q58332979 type Item @default.
- Q58332979 label "The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth — Study of surface morphology" @default.
- Q58332979 label "The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth — Study of surface morphology" @default.
- Q58332979 prefLabel "The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth — Study of surface morphology" @default.
- Q58332979 prefLabel "The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth — Study of surface morphology" @default.
- Q58332979 P1433 Q58332979-04433E35-DB11-4074-9C5F-03AFB197CA93 @default.
- Q58332979 P1476 Q58332979-DA77B80A-A558-4287-96B5-0E2FC90119D6 @default.
- Q58332979 P2093 Q58332979-42567C2C-9B7E-46EF-B9E2-D6A73F2D6386 @default.
- Q58332979 P2093 Q58332979-581A8122-A25F-4C89-8868-FAB662E7C5C3 @default.
- Q58332979 P2093 Q58332979-80235197-3D57-44FE-B257-85789211E73F @default.
- Q58332979 P2093 Q58332979-D1FCE0B1-A3DA-4240-8345-EED5549E30CE @default.
- Q58332979 P2093 Q58332979-E0723B8C-EDBC-4461-8CF7-7F1C64E59D78 @default.
- Q58332979 P304 Q58332979-27FB3333-A9C6-44BA-BDDC-367CA7F87A1A @default.
- Q58332979 P31 Q58332979-B7CBBA0C-F2E6-4AAC-B969-03F6733B8996 @default.
- Q58332979 P356 Q58332979-1B86564B-6E25-4EC5-AA1D-418034D6A277 @default.
- Q58332979 P433 Q58332979-80A738C0-5DAC-49CF-9641-FA31CBEC0C41 @default.
- Q58332979 P478 Q58332979-5A35BC88-FD84-4B00-BD3A-E4D7723F699A @default.
- Q58332979 P577 Q58332979-BBE4E65E-9A24-417D-9628-1ABDE337518B @default.
- Q58332979 P921 Q58332979-BC8878E0-A3DF-405E-A786-0CE2EFDBAD81 @default.
- Q58332979 P356 J.DIAMOND.2006.08.013 @default.
- Q58332979 P1433 Q15757085 @default.
- Q58332979 P1476 "The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth — Study of surface morphology" @default.
- Q58332979 P2093 "Hideyo Okushi" @default.
- Q58332979 P2093 "Hitoshi Umezawa" @default.
- Q58332979 P2093 "Norio Tokuda" @default.
- Q58332979 P2093 "Satoshi Yamasaki" @default.
- Q58332979 P2093 "Takeyasu Saito" @default.
- Q58332979 P304 "409-411" @default.
- Q58332979 P31 Q13442814 @default.
- Q58332979 P356 "10.1016/J.DIAMOND.2006.08.013" @default.
- Q58332979 P433 "2" @default.
- Q58332979 P478 "16" @default.
- Q58332979 P577 "2007-02-01T00:00:00Z" @default.
- Q58332979 P921 Q11456 @default.