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- Q58485229 description "article scientifique publié en 2018" @default.
- Q58485229 description "article" @default.
- Q58485229 description "im Juni 2018 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58485229 description "wetenschappelijk artikel" @default.
- Q58485229 description "наукова стаття, опублікована в червні 2018" @default.
- Q58485229 name "1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts" @default.
- Q58485229 name "1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts" @default.
- Q58485229 type Item @default.
- Q58485229 label "1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts" @default.
- Q58485229 label "1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts" @default.
- Q58485229 prefLabel "1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts" @default.
- Q58485229 prefLabel "1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts" @default.
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- Q58485229 P1476 "1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts" @default.
- Q58485229 P2093 "Xiaodong Shen" @default.
- Q58485229 P2093 "Yifeng Wang" @default.
- Q58485229 P304 "031012" @default.
- Q58485229 P31 Q13442814 @default.
- Q58485229 P356 "10.1088/2053-1583/AAC859" @default.
- Q58485229 P433 "3" @default.
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- Q58485229 P577 "2018-06-13T00:00:00Z" @default.
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