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- Q58646557 description "article scientifique publié en 2006" @default.
- Q58646557 description "im April 2006 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58646557 description "wetenschappelijk artikel" @default.
- Q58646557 description "наукова стаття, опублікована у квітні 2006" @default.
- Q58646557 name "Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells" @default.
- Q58646557 name "Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells" @default.
- Q58646557 type Item @default.
- Q58646557 label "Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells" @default.
- Q58646557 label "Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells" @default.
- Q58646557 prefLabel "Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells" @default.
- Q58646557 prefLabel "Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells" @default.
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- Q58646557 P304 Q58646557-C5511696-54E0-4B76-9315-4DDEB6CF60B0 @default.
- Q58646557 P31 Q58646557-9C1C7FB4-01FD-4B91-87B5-6E6CAF2B9D28 @default.
- Q58646557 P356 Q58646557-ADAC6FFC-E024-43B3-AEAA-8A91EE089AA5 @default.
- Q58646557 P433 Q58646557-6247F156-B411-4AF3-BD8A-12556797F0C5 @default.
- Q58646557 P478 Q58646557-254664DF-7E52-4ED2-AF20-EBD9EC507AB7 @default.
- Q58646557 P50 Q58646557-7B608964-9788-404D-81F6-607215C58476 @default.
- Q58646557 P577 Q58646557-94831B50-E15C-4236-830D-2D34CE9E2CA4 @default.
- Q58646557 P356 1.2162813 @default.
- Q58646557 P1433 Q1987941 @default.
- Q58646557 P1476 "Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells" @default.
- Q58646557 P2093 "F. Silva" @default.
- Q58646557 P2093 "J. N. Chapman" @default.
- Q58646557 P2093 "L. V. Melo" @default.
- Q58646557 P2093 "M. MacKenzie" @default.
- Q58646557 P2093 "O. Redon" @default.
- Q58646557 P2093 "P. P. Freitas" @default.
- Q58646557 P2093 "R. C. Sousa" @default.
- Q58646557 P2093 "R. Ferreira" @default.
- Q58646557 P2093 "S. Cardoso" @default.
- Q58646557 P2860 Q58646673 @default.
- Q58646557 P2860 Q58646877 @default.
- Q58646557 P304 "08N901" @default.
- Q58646557 P31 Q13442814 @default.
- Q58646557 P356 "10.1063/1.2162813" @default.
- Q58646557 P433 "8" @default.
- Q58646557 P478 "99" @default.
- Q58646557 P50 Q78897983 @default.
- Q58646557 P577 "2006-04-15T00:00:00Z" @default.