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- Q58689245 description "article" @default.
- Q58689245 description "im Jahr 2012 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58689245 description "wetenschappelijk artikel" @default.
- Q58689245 description "наукова стаття, опублікована у 2012" @default.
- Q58689245 description "հոդված" @default.
- Q58689245 name "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors" @default.
- Q58689245 name "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors" @default.
- Q58689245 type Item @default.
- Q58689245 label "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors" @default.
- Q58689245 label "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors" @default.
- Q58689245 prefLabel "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors" @default.
- Q58689245 prefLabel "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors" @default.
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- Q58689245 P356 852063 @default.
- Q58689245 P1433 Q27723419 @default.
- Q58689245 P1476 "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors" @default.
- Q58689245 P2093 "Hiroyoshi Naito" @default.
- Q58689245 P2093 "Kimihiro Matsukawa" @default.
- Q58689245 P2093 "Mitsuru Watanabe" @default.
- Q58689245 P2093 "Takashi Hamada" @default.
- Q58689245 P2093 "Takashi Nagase" @default.
- Q58689245 P275 Q14947546 @default.
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- Q58689245 P2860 Q58912551 @default.
- Q58689245 P304 "1-10" @default.
- Q58689245 P31 Q13442814 @default.
- Q58689245 P356 "10.1155/2012/852063" @default.
- Q58689245 P478 "2012" @default.
- Q58689245 P577 "2012-01-01T00:00:00Z" @default.
- Q58689245 P6216 Q50423863 @default.
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