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- Q58698758 description "article published in 2012" @default.
- Q58698758 description "im Jahr 2012 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58698758 description "wetenschappelijk artikel" @default.
- Q58698758 description "наукова стаття, опублікована у 2012" @default.
- Q58698758 name "Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application" @default.
- Q58698758 name "Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application" @default.
- Q58698758 type Item @default.
- Q58698758 label "Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application" @default.
- Q58698758 label "Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application" @default.
- Q58698758 prefLabel "Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application" @default.
- Q58698758 prefLabel "Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application" @default.
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- Q58698758 P356 840348 @default.
- Q58698758 P1433 Q15758265 @default.
- Q58698758 P1476 "Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application" @default.
- Q58698758 P2093 "B. Gholipour" @default.
- Q58698758 P2093 "C. C. Huang" @default.
- Q58698758 P2093 "D. W. Hewak" @default.
- Q58698758 P2093 "J. Y. Ou" @default.
- Q58698758 P2093 "K. Knight" @default.
- Q58698758 P275 Q14947546 @default.
- Q58698758 P2860 Q33454614 @default.
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- Q58698758 P2860 Q59151981 @default.
- Q58698758 P304 "1-7" @default.
- Q58698758 P31 Q13442814 @default.
- Q58698758 P356 "10.1155/2012/840348" @default.
- Q58698758 P478 "2012" @default.
- Q58698758 P577 "2012-01-01T00:00:00Z" @default.
- Q58698758 P6216 Q50423863 @default.
- Q58698758 P921 Q1137203 @default.