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- Q58699346 description "article scientifique publié en 2012" @default.
- Q58699346 description "im Jahr 2012 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58699346 description "wetenschappelijk artikel" @default.
- Q58699346 description "наукова стаття, опублікована у 2012" @default.
- Q58699346 name "Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices" @default.
- Q58699346 name "Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices" @default.
- Q58699346 type Item @default.
- Q58699346 label "Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices" @default.
- Q58699346 label "Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices" @default.
- Q58699346 prefLabel "Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices" @default.
- Q58699346 prefLabel "Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices" @default.
- Q58699346 P1433 Q58699346-8A80788F-AC65-486B-A914-6DF1D9D1AC75 @default.
- Q58699346 P1476 Q58699346-5437C0FE-3BE3-4249-9518-9AD5946A81BD @default.
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- Q58699346 P2093 Q58699346-71E71626-B4CE-4E12-B8DF-79EAEF39E728 @default.
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- Q58699346 P2093 Q58699346-A4A0372B-F0C0-40E3-B7E2-12585A2255B5 @default.
- Q58699346 P2093 Q58699346-C14D4C02-0E7B-4AF7-8CD9-C5E7392FF30B @default.
- Q58699346 P275 Q58699346-359047F2-3612-42FE-8479-984DB0E843BF @default.
- Q58699346 P304 Q58699346-0ACFE482-4BED-40C8-9ADA-410FA799F006 @default.
- Q58699346 P31 Q58699346-60A1F26F-0361-4FC5-81A1-E261039EB809 @default.
- Q58699346 P356 Q58699346-4C0AAF1A-8F01-4D12-A308-95A99ED1FB29 @default.
- Q58699346 P478 Q58699346-27D23BB0-6555-47B8-8B5B-DC8FF17338D1 @default.
- Q58699346 P577 Q58699346-523EC0B6-CE69-458C-B298-F8AE13F5D057 @default.
- Q58699346 P6216 Q58699346-11355CAF-BEDD-4A86-9561-FF428820B8F0 @default.
- Q58699346 P921 Q58699346-646C3D76-DABC-4DAE-B697-B40F56836347 @default.
- Q58699346 P356 359580 @default.
- Q58699346 P1433 Q15757453 @default.
- Q58699346 P1476 "Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices" @default.
- Q58699346 P2093 "C. W. Bielawski" @default.
- Q58699346 P2093 "G. Bersuker" @default.
- Q58699346 P2093 "J. H. Yum" @default.
- Q58699346 P2093 "J. Oh" @default.
- Q58699346 P2093 "S. K. Banerjee" @default.
- Q58699346 P2093 "Todd. W. Hudnall" @default.
- Q58699346 P275 Q14947546 @default.
- Q58699346 P304 "1-7" @default.
- Q58699346 P31 Q13442814 @default.
- Q58699346 P356 "10.1155/2012/359580" @default.
- Q58699346 P478 "2012" @default.
- Q58699346 P577 "2012-01-01T00:00:00Z" @default.
- Q58699346 P6216 Q50423863 @default.
- Q58699346 P921 Q11456 @default.