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- Q58793409 description "article published in 2004" @default.
- Q58793409 description "article scientifique publié en 2004" @default.
- Q58793409 description "im September 2004 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58793409 description "wetenschappelijk artikel" @default.
- Q58793409 description "наукова стаття, опублікована у вересні 2004" @default.
- Q58793409 name "Study of bistable defects created after high-temperature annealing in proton irradiated Si diodes" @default.
- Q58793409 name "Study of bistable defects created after high-temperature annealing in proton irradiated Si diodes" @default.
- Q58793409 type Item @default.
- Q58793409 label "Study of bistable defects created after high-temperature annealing in proton irradiated Si diodes" @default.
- Q58793409 label "Study of bistable defects created after high-temperature annealing in proton irradiated Si diodes" @default.
- Q58793409 prefLabel "Study of bistable defects created after high-temperature annealing in proton irradiated Si diodes" @default.
- Q58793409 prefLabel "Study of bistable defects created after high-temperature annealing in proton irradiated Si diodes" @default.
- Q58793409 P1433 Q58793409-A484E389-9F45-48B7-907B-6001E82157A4 @default.
- Q58793409 P1476 Q58793409-A65F0A93-BCE1-4266-BDF1-EEDBD95ED297 @default.
- Q58793409 P2093 Q58793409-5CE3E2C9-0483-487C-B8D2-BD717DE252E3 @default.
- Q58793409 P2093 Q58793409-83A2BA6D-801B-42F2-9C00-7E78392414E5 @default.
- Q58793409 P2093 Q58793409-9E29ED22-D552-4146-9823-3AF623569FC8 @default.
- Q58793409 P2093 Q58793409-CEAD6BC2-5E3F-414E-8EF3-1CAF6D15E9DC @default.
- Q58793409 P304 Q58793409-74AEB555-1181-49F2-96EF-7B277DF400DB @default.
- Q58793409 P31 Q58793409-F5F00A8B-E0BC-45FF-A242-5F081A1CE017 @default.
- Q58793409 P356 Q58793409-B0A92E0A-44CD-4C0A-A2C2-A17CCB372990 @default.
- Q58793409 P433 Q58793409-F9C287B0-16F9-459C-A759-E4CFC1D703B5 @default.
- Q58793409 P478 Q58793409-73FE4F9F-F2ED-4EC3-94FC-E8F78D738A43 @default.
- Q58793409 P50 Q58793409-0079551E-2525-4189-A118-E0804401A701 @default.
- Q58793409 P50 Q58793409-4A07A199-F4E2-402F-AE63-86DF24053719 @default.
- Q58793409 P50 Q58793409-5F711FD4-6688-4EC1-9546-986E4BA3AB78 @default.
- Q58793409 P50 Q58793409-FEB1EC39-8AE0-49C5-AE81-369C6887B750 @default.
- Q58793409 P577 Q58793409-B20FB8C1-6ABA-4A05-A93F-878719CCD2FC @default.
- Q58793409 P356 J.NIMA.2004.05.060 @default.
- Q58793409 P1433 Q3595365 @default.
- Q58793409 P1476 "Study of bistable defects created after high-temperature annealing in proton irradiated Si diodes" @default.
- Q58793409 P2093 "D. Giordano" @default.
- Q58793409 P2093 "M. de Palma" @default.
- Q58793409 P2093 "P. Tempesta" @default.
- Q58793409 P2093 "V. Radicci" @default.
- Q58793409 P304 "128-133" @default.
- Q58793409 P31 Q13442814 @default.
- Q58793409 P356 "10.1016/J.NIMA.2004.05.060" @default.
- Q58793409 P433 "1-2" @default.
- Q58793409 P478 "530" @default.
- Q58793409 P50 Q118291611 @default.
- Q58793409 P50 Q54988427 @default.
- Q58793409 P50 Q96691164 @default.
- Q58793409 P50 Q96691169 @default.
- Q58793409 P577 "2004-09-01T00:00:00Z" @default.