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- Q58799647 description "article scientifique publié en 2011" @default.
- Q58799647 description "im Dezember 2011 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58799647 description "wetenschappelijk artikel" @default.
- Q58799647 description "наукова стаття, опублікована в грудні 2011" @default.
- Q58799647 name "Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy" @default.
- Q58799647 name "Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy" @default.
- Q58799647 type Item @default.
- Q58799647 label "Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy" @default.
- Q58799647 label "Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy" @default.
- Q58799647 prefLabel "Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy" @default.
- Q58799647 prefLabel "Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy" @default.
- Q58799647 P1433 Q58799647-09879C0D-34F6-4DC9-81B1-F6608FEA7A58 @default.
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- Q58799647 P577 Q58799647-21F32A86-5EAE-49DE-BAAD-C30410EF6CE7 @default.
- Q58799647 P356 JMEMS.2011.2167670 @default.
- Q58799647 P1433 Q15758112 @default.
- Q58799647 P1476 "Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy" @default.
- Q58799647 P2093 "Bharat Bhushan" @default.
- Q58799647 P2093 "Fabio Coccetti" @default.
- Q58799647 P2093 "George J. Papaioannou" @default.
- Q58799647 P2093 "Haixia Wang" @default.
- Q58799647 P2093 "Patrick Pons" @default.
- Q58799647 P2093 "Robert Plana" @default.
- Q58799647 P2093 "Usama Zaghloul" @default.
- Q58799647 P304 "1395-1418" @default.
- Q58799647 P31 Q13442814 @default.
- Q58799647 P356 "10.1109/JMEMS.2011.2167670" @default.
- Q58799647 P433 "6" @default.
- Q58799647 P4510 Q112133816 @default.
- Q58799647 P478 "20" @default.
- Q58799647 P577 "2011-12-01T00:00:00Z" @default.