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- Q59386311 description "article scientifique publié en 2017" @default.
- Q59386311 description "im April 2017 veröffentlichter wissenschaftlicher Artikel" @default.
- Q59386311 description "wetenschappelijk artikel" @default.
- Q59386311 description "наукова стаття, опублікована у квітні 2017" @default.
- Q59386311 name "Thin SiO 2 /a-Si:H/SiO 2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories" @default.
- Q59386311 name "Thin SiO 2 /a-Si:H/SiO 2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories" @default.
- Q59386311 type Item @default.
- Q59386311 label "Thin SiO 2 /a-Si:H/SiO 2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories" @default.
- Q59386311 label "Thin SiO 2 /a-Si:H/SiO 2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories" @default.
- Q59386311 prefLabel "Thin SiO 2 /a-Si:H/SiO 2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories" @default.
- Q59386311 prefLabel "Thin SiO 2 /a-Si:H/SiO 2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories" @default.
- Q59386311 P1433 Q59386311-5E8959C4-40DE-447C-84CD-A8E31F3B8102 @default.
- Q59386311 P1476 Q59386311-5D51DA7E-A898-40DC-B96E-4B985AEC2684 @default.
- Q59386311 P2093 Q59386311-39AAFAB6-7E81-4F01-836F-058581A67FC0 @default.
- Q59386311 P2093 Q59386311-42E211B2-5CB1-4ACF-9AC6-829CB11263D3 @default.
- Q59386311 P2093 Q59386311-4BCFA6CC-917C-4F05-9CD4-853AEA9774AB @default.
- Q59386311 P2093 Q59386311-5FA14645-C2F1-46D6-8882-3DC836CFE1EB @default.
- Q59386311 P2093 Q59386311-C5416A85-9712-4E81-9E1C-8A70FB5CD92A @default.
- Q59386311 P2093 Q59386311-C8DA0901-E8C8-42F5-AD25-81C9EC700DF5 @default.
- Q59386311 P2093 Q59386311-DF60224E-620B-4124-8DBA-B8085BF091C9 @default.
- Q59386311 P2093 Q59386311-F135DB20-4AE8-414B-A19A-7398A645D72B @default.
- Q59386311 P2860 Q59386311-B185C8DB-4DE6-41AA-A2E5-9A3191471ED0 @default.
- Q59386311 P304 Q59386311-04FA6410-77CE-49A4-9DCD-4C295A1002DF @default.
- Q59386311 P31 Q59386311-59EE1E6C-C416-43AC-BE05-454BE8AB19F8 @default.
- Q59386311 P356 Q59386311-26012101-EE07-4082-81CA-84B562A40623 @default.
- Q59386311 P478 Q59386311-2CD6AD16-37E0-4567-9D9B-3CF3FFEAC763 @default.
- Q59386311 P577 Q59386311-B74AFE31-2E47-4C08-B75C-E56E28E0D4F7 @default.
- Q59386311 P356 J.TSF.2017.03.023 @default.
- Q59386311 P1433 Q2062139 @default.
- Q59386311 P1476 "Thin SiO 2 /a-Si:H/SiO 2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories" @default.
- Q59386311 P2093 "B. Valdez" @default.
- Q59386311 P2093 "D. Mateos" @default.
- Q59386311 P2093 "G. Montero" @default.
- Q59386311 P2093 "J.A. Diniz" @default.
- Q59386311 P2093 "M. Curiel" @default.
- Q59386311 P2093 "M. Mederos" @default.
- Q59386311 P2093 "N. Nedev" @default.
- Q59386311 P2093 "S.N.M. Munoz" @default.
- Q59386311 P2860 Q56028574 @default.
- Q59386311 P304 "96-100" @default.
- Q59386311 P31 Q13442814 @default.
- Q59386311 P356 "10.1016/J.TSF.2017.03.023" @default.
- Q59386311 P478 "628" @default.
- Q59386311 P577 "2017-04-01T00:00:00Z" @default.