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- Q59458029 description "article scientifique publié en 2004" @default.
- Q59458029 description "im Februar 2004 veröffentlichter wissenschaftlicher Artikel" @default.
- Q59458029 description "wetenschappelijk artikel" @default.
- Q59458029 description "наукова стаття, опублікована в лютому 2004" @default.
- Q59458029 name "Ion-channeling and Raman scattering study of damage accumulation in silicon" @default.
- Q59458029 name "Ion-channeling and Raman scattering study of damage accumulation in silicon" @default.
- Q59458029 type Item @default.
- Q59458029 label "Ion-channeling and Raman scattering study of damage accumulation in silicon" @default.
- Q59458029 label "Ion-channeling and Raman scattering study of damage accumulation in silicon" @default.
- Q59458029 prefLabel "Ion-channeling and Raman scattering study of damage accumulation in silicon" @default.
- Q59458029 prefLabel "Ion-channeling and Raman scattering study of damage accumulation in silicon" @default.
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- Q59458029 P356 1.1636814 @default.
- Q59458029 P1433 Q1987941 @default.
- Q59458029 P1476 "Ion-channeling and Raman scattering study of damage accumulation in silicon" @default.
- Q59458029 P2093 "B. C. Johnson" @default.
- Q59458029 P2093 "J. C. McCallum" @default.
- Q59458029 P2860 Q29301338 @default.
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- Q59458029 P304 "1096-1101" @default.
- Q59458029 P31 Q13442814 @default.
- Q59458029 P356 "10.1063/1.1636814" @default.
- Q59458029 P433 "3" @default.
- Q59458029 P478 "95" @default.
- Q59458029 P577 "2004-02-01T00:00:00Z" @default.