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- Q59481635 description "article by Renaud Puybaret et al published 7 March 2016 in Applied Physics Letters" @default.
- Q59481635 description "article scientifique publié en 2016" @default.
- Q59481635 description "im März 2016 veröffentlichter wissenschaftlicher Artikel" @default.
- Q59481635 description "wetenschappelijk artikel" @default.
- Q59481635 description "наукова стаття, опублікована в березні 2016" @default.
- Q59481635 name "Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask" @default.
- Q59481635 name "Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask" @default.
- Q59481635 type Item @default.
- Q59481635 label "Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask" @default.
- Q59481635 label "Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask" @default.
- Q59481635 prefLabel "Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask" @default.
- Q59481635 prefLabel "Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask" @default.
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- Q59481635 P356 1.4943205 @default.
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- Q59481635 P1476 "Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask" @default.
- Q59481635 P2093 "Claire Berger" @default.
- Q59481635 P2093 "Matthew B. Jordan" @default.
- Q59481635 P2093 "Walt A. de Heer" @default.
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- Q59481635 P577 "2016-03-07T00:00:00Z" @default.