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- Q59510044 description "article scientifique publié en octobre 2002" @default.
- Q59510044 description "im Oktober 2002 veröffentlichter wissenschaftlicher Artikel" @default.
- Q59510044 description "wetenschappelijk artikel" @default.
- Q59510044 description "наукова стаття, опублікована в жовтні 2002" @default.
- Q59510044 name "Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates" @default.
- Q59510044 name "Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si" @default.
- Q59510044 type Item @default.
- Q59510044 label "Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates" @default.
- Q59510044 label "Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si" @default.
- Q59510044 prefLabel "Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates" @default.
- Q59510044 prefLabel "Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si" @default.
- Q59510044 P1433 Q59510044-F6A374BA-76F4-43A6-B508-DB7BAF344DF9 @default.
- Q59510044 P1476 Q59510044-2098B95E-2739-424A-84EA-CF442DC9FFE5 @default.
- Q59510044 P2093 Q59510044-2C6024BF-E2F5-4AC6-93E6-5E7701A1EC42 @default.
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- Q59510044 P2093 Q59510044-BA83E848-85A3-40BC-8067-CDCA620012DF @default.
- Q59510044 P2093 Q59510044-DB0B2C0E-71F5-4DD8-AD4B-B3648229F3AE @default.
- Q59510044 P2093 Q59510044-F39B9193-E3A5-456A-AEC6-ED5D31190979 @default.
- Q59510044 P2860 Q59510044-B4421658-6E80-49BF-BD9F-0F46E1AA4CE1 @default.
- Q59510044 P2860 Q59510044-F44A735D-D4CC-4A35-ADD8-DF60DE4FB3E7 @default.
- Q59510044 P304 Q59510044-140A59F8-CB42-4212-A12C-8C8232E3FFFD @default.
- Q59510044 P31 Q59510044-6C6DEE69-1B39-4264-B343-E786B9AAA1E5 @default.
- Q59510044 P356 Q59510044-86CECD71-A2C6-4316-A410-3521152C6E11 @default.
- Q59510044 P433 Q59510044-706E520E-C684-45DC-9774-7C92E1AD39BB @default.
- Q59510044 P478 Q59510044-ED9ED6C7-3921-48AF-A217-A2CAA5BDDE80 @default.
- Q59510044 P50 Q59510044-1B492933-B32A-44EE-8A81-6C94E6009C0A @default.
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- Q59510044 P577 Q59510044-36A7FFB3-AA5F-4392-8C9F-1928218FE43D @default.
- Q59510044 P356 1.1504496 @default.
- Q59510044 P1433 Q1987941 @default.
- Q59510044 P1476 "Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates" @default.
- Q59510044 P2093 "B. Holländer" @default.
- Q59510044 P2093 "D. Kirch" @default.
- Q59510044 P2093 "H. Trinkaus" @default.
- Q59510044 P2093 "H.-J. Herzog" @default.
- Q59510044 P2093 "P. F. P. Fichtner" @default.
- Q59510044 P2093 "St. Lenk" @default.
- Q59510044 P2093 "T. Hackbarth" @default.
- Q59510044 P2860 Q62057468 @default.
- Q59510044 P2860 Q62057505 @default.
- Q59510044 P304 "4290-4295" @default.
- Q59510044 P31 Q13442814 @default.
- Q59510044 P356 "10.1063/1.1504496" @default.
- Q59510044 P433 "8" @default.
- Q59510044 P478 "92" @default.
- Q59510044 P50 Q42289893 @default.
- Q59510044 P50 Q43963952 @default.
- Q59510044 P50 Q60027575 @default.
- Q59510044 P577 "2002-10-15T00:00:00Z" @default.