Matches in Wikidata for { <http://www.wikidata.org/entity/Q59961081> ?p ?o ?g. }
Showing items 1 to 55 of
55
with 100 items per page.
- Q59961081 description "im September 2011 veröffentlichter wissenschaftlicher Artikel" @default.
- Q59961081 description "wetenschappelijk artikel" @default.
- Q59961081 description "наукова стаття, опублікована у вересні 2011" @default.
- Q59961081 name "Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2" @default.
- Q59961081 name "Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2" @default.
- Q59961081 type Item @default.
- Q59961081 label "Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2" @default.
- Q59961081 label "Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2" @default.
- Q59961081 prefLabel "Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2" @default.
- Q59961081 prefLabel "Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2" @default.
- Q59961081 P1433 Q59961081-1E31EE38-D208-4C4F-B3E5-EED0DDD5288D @default.
- Q59961081 P1476 Q59961081-CA30E637-BB60-406D-87CE-76B9406C3350 @default.
- Q59961081 P2093 Q59961081-03392437-2894-47FF-BCFF-B0778999E8BB @default.
- Q59961081 P2093 Q59961081-0D017199-E611-44F7-A6C4-C01F8CB2511A @default.
- Q59961081 P2093 Q59961081-0E8C0BB1-8173-4AD6-990C-1A1929D46BE7 @default.
- Q59961081 P2093 Q59961081-7EF0DAC5-2125-4DB3-A455-D1DB3481D37F @default.
- Q59961081 P2093 Q59961081-80465D89-8871-4F8E-A61C-EF75F60520B8 @default.
- Q59961081 P2093 Q59961081-9518D821-4B62-4A1A-AA5B-B48DED36266F @default.
- Q59961081 P2093 Q59961081-D185EE79-0DAE-4178-948D-57849FC4F906 @default.
- Q59961081 P2093 Q59961081-E0D19084-C43E-41E7-B165-0ECB98B6AD87 @default.
- Q59961081 P2860 Q59961081-63FE8E09-6E90-42EA-AC8E-EC7DEF2CDC93 @default.
- Q59961081 P2860 Q59961081-C1B66DC7-F409-4AED-87B9-CF346C82A2EE @default.
- Q59961081 P2860 Q59961081-DF86ABAF-1707-46BE-AB82-65C6635BB5E2 @default.
- Q59961081 P2860 Q59961081-E18D6E43-B1A3-4D38-ACF4-898F3A05F100 @default.
- Q59961081 P2860 Q59961081-FA4B357D-07AC-49E3-8A84-C6C15A13F827 @default.
- Q59961081 P304 Q59961081-7B91EAC2-3560-4FE5-95E6-2502BDA9768F @default.
- Q59961081 P31 Q59961081-89DB96B0-F789-4DF6-861C-0BE8FC36C602 @default.
- Q59961081 P356 Q59961081-88AC47AB-DA76-453A-9EDA-1ACADA38F3D1 @default.
- Q59961081 P433 Q59961081-A0CF6504-A52A-4614-AB7C-77F59D6CCE38 @default.
- Q59961081 P478 Q59961081-E87C2A86-6D81-41A9-917A-8009BB0B952B @default.
- Q59961081 P50 Q59961081-2EE9A3BC-DD83-4A7E-8F8D-84CD7A5A4AEC @default.
- Q59961081 P577 Q59961081-8982F733-3502-4FE8-A076-E7E1CE0B33EF @default.
- Q59961081 P356 J.TSF.2011.05.044 @default.
- Q59961081 P1433 Q2062139 @default.
- Q59961081 P1476 "Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2" @default.
- Q59961081 P2093 "Daniel J. Friedman" @default.
- Q59961081 P2093 "Darin Leonhardt" @default.
- Q59961081 P2093 "Jeffrey G. Cederberg" @default.
- Q59961081 P2093 "Josephine Sheng" @default.
- Q59961081 P2093 "Malcolm S. Carroll" @default.
- Q59961081 P2093 "Manual J. Romero" @default.
- Q59961081 P2093 "Qiming Li" @default.
- Q59961081 P2093 "Sang M. Han" @default.
- Q59961081 P2860 Q57624527 @default.
- Q59961081 P2860 Q62605422 @default.
- Q59961081 P2860 Q64356135 @default.
- Q59961081 P2860 Q73662475 @default.
- Q59961081 P2860 Q74469696 @default.
- Q59961081 P304 "7664-7671" @default.
- Q59961081 P31 Q13442814 @default.
- Q59961081 P356 "10.1016/J.TSF.2011.05.044" @default.
- Q59961081 P433 "22" @default.
- Q59961081 P478 "519" @default.
- Q59961081 P50 Q55222611 @default.
- Q59961081 P577 "2011-09-01T00:00:00Z" @default.