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- Q60161416 description "article scientifique publié en 1991" @default.
- Q60161416 description "article" @default.
- Q60161416 description "wetenschappelijk artikel" @default.
- Q60161416 description "наукова стаття, опублікована в травні 1991" @default.
- Q60161416 description "հոդված" @default.
- Q60161416 name "High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP" @default.
- Q60161416 name "High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP" @default.
- Q60161416 type Item @default.
- Q60161416 label "High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP" @default.
- Q60161416 label "High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP" @default.
- Q60161416 prefLabel "High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP" @default.
- Q60161416 prefLabel "High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP" @default.
- Q60161416 P1433 Q60161416-2895EADF-56E7-4D44-82FF-5E32945BEAAC @default.
- Q60161416 P1476 Q60161416-F7B21ED3-8363-482B-A409-819DA093FE30 @default.
- Q60161416 P2093 Q60161416-2C879FE0-5435-4F9F-9042-CA144ABEA46D @default.
- Q60161416 P2093 Q60161416-DD2C58C9-3247-4062-B4D8-C6D51B009B02 @default.
- Q60161416 P304 Q60161416-3A32102C-8F04-40EC-A5D3-33703889476D @default.
- Q60161416 P31 Q60161416-A6C34B0F-B499-466B-A255-BADC70ABC161 @default.
- Q60161416 P356 Q60161416-50C86CEB-30E4-4371-8DE8-147925E162D2 @default.
- Q60161416 P433 Q60161416-A290BD77-5B23-43C8-9CB3-A7BB812F6266 @default.
- Q60161416 P478 Q60161416-2C1E4B31-72B6-44C5-B42D-59862FBFA5CE @default.
- Q60161416 P50 Q60161416-0FF8C0E5-25D3-4674-876F-BBC831926C34 @default.
- Q60161416 P577 Q60161416-D5D62A70-F724-4C67-97AC-F7ED1DD1B861 @default.
- Q60161416 P356 0022-0248(91)91022-3 @default.
- Q60161416 P1433 Q1929756 @default.
- Q60161416 P1476 "High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP" @default.
- Q60161416 P2093 "F. Gueissaz" @default.
- Q60161416 P2093 "M. Ilegems" @default.
- Q60161416 P304 "470-474" @default.
- Q60161416 P31 Q13442814 @default.
- Q60161416 P356 "10.1016/0022-0248(91)91022-3" @default.
- Q60161416 P433 "1-4" @default.
- Q60161416 P478 "111" @default.
- Q60161416 P50 Q56750577 @default.
- Q60161416 P577 "1991-05-01T00:00:00Z" @default.