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- Q60176483 description "article published in 2010" @default.
- Q60176483 description "article scientifique publié en 2010" @default.
- Q60176483 description "im Mai 2010 veröffentlichter wissenschaftlicher Artikel" @default.
- Q60176483 description "wetenschappelijk artikel" @default.
- Q60176483 description "наукова стаття, опублікована в травні 2010" @default.
- Q60176483 name "Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates" @default.
- Q60176483 name "Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates" @default.
- Q60176483 type Item @default.
- Q60176483 label "Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates" @default.
- Q60176483 label "Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates" @default.
- Q60176483 prefLabel "Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates" @default.
- Q60176483 prefLabel "Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates" @default.
- Q60176483 P1433 Q60176483-09D62843-4A6D-4DEA-A05F-D70FD5B9AD4D @default.
- Q60176483 P1476 Q60176483-41F2AF28-420F-49B1-B382-851B5D4F0A5A @default.
- Q60176483 P2093 Q60176483-0465CE01-978F-4789-B2D8-0810ECFF94AA @default.
- Q60176483 P2093 Q60176483-35AD6FEA-2A11-411A-98D5-245F1DE5155E @default.
- Q60176483 P2093 Q60176483-54991390-BA10-438D-A012-54B4200958BE @default.
- Q60176483 P2093 Q60176483-91BE23B3-E165-4D2B-9AAB-83E228FD12B5 @default.
- Q60176483 P2093 Q60176483-D66F525A-D5B3-4969-8363-F98D9FDB2B14 @default.
- Q60176483 P2093 Q60176483-DA95DFF9-E9E3-488B-B8F6-30BCEFDF2406 @default.
- Q60176483 P2093 Q60176483-F72C3D96-C0D4-4722-BB81-D57DE2CC6B15 @default.
- Q60176483 P304 Q60176483-0561CA60-6C34-4C89-A05F-439AD7D60969 @default.
- Q60176483 P31 Q60176483-F2559E9B-D18C-44D8-842B-1094E8B293AA @default.
- Q60176483 P356 Q60176483-CC00F90E-172A-4837-8BC4-7726F4423F17 @default.
- Q60176483 P433 Q60176483-E0CE5F6B-E71B-4E18-B9A6-7107614EE894 @default.
- Q60176483 P478 Q60176483-16459F39-F21C-4518-B936-0FCCD7A839DE @default.
- Q60176483 P577 Q60176483-FC3B1CBD-7058-41A0-8C14-F7614843F80C @default.
- Q60176483 P356 J.DIAMOND.2009.10.027 @default.
- Q60176483 P1433 Q15757085 @default.
- Q60176483 P1476 "Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates" @default.
- Q60176483 P2093 "E. Vlieg" @default.
- Q60176483 P2093 "G.W.G. van Dreumel" @default.
- Q60176483 P2093 "J.G. Buijnsters" @default.
- Q60176483 P2093 "J.J. ter Meulen" @default.
- Q60176483 P2093 "P.R. Hageman" @default.
- Q60176483 P2093 "T. Bohnen" @default.
- Q60176483 P2093 "W.J.P. van Enckevort" @default.
- Q60176483 P304 "437-440" @default.
- Q60176483 P31 Q13442814 @default.
- Q60176483 P356 "10.1016/J.DIAMOND.2009.10.027" @default.
- Q60176483 P433 "5-6" @default.
- Q60176483 P478 "19" @default.
- Q60176483 P577 "2010-05-01T00:00:00Z" @default.