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- Q60450178 description "article scientifique publié en 2014" @default.
- Q60450178 description "im Januar 2014 veröffentlichter wissenschaftlicher Artikel" @default.
- Q60450178 description "wetenschappelijk artikel" @default.
- Q60450178 description "наукова стаття, опублікована в січні 2014" @default.
- Q60450178 name "Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication" @default.
- Q60450178 name "Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication" @default.
- Q60450178 type Item @default.
- Q60450178 label "Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication" @default.
- Q60450178 label "Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication" @default.
- Q60450178 prefLabel "Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication" @default.
- Q60450178 prefLabel "Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication" @default.
- Q60450178 P1433 Q60450178-62A43F96-A703-473E-8A34-57E72C6259A6 @default.
- Q60450178 P1476 Q60450178-5ACC6557-230F-4D1C-8D85-A1818E290479 @default.
- Q60450178 P2093 Q60450178-1E92355E-77BF-46CE-8691-2204A42CD92C @default.
- Q60450178 P2093 Q60450178-8CCF9764-4CBE-4600-9E3E-A8AD5A3AA71A @default.
- Q60450178 P2093 Q60450178-97BCDE8E-BA40-47C7-BDEA-53418DF7830E @default.
- Q60450178 P2093 Q60450178-CB123C63-A83D-4BBE-8776-D3BE0B089C94 @default.
- Q60450178 P2093 Q60450178-F1F61D20-3F32-4712-9B2D-0BBE8244CB8D @default.
- Q60450178 P2888 Q60450178-1AB00787-DE9F-4A55-8F45-098A52008822 @default.
- Q60450178 P304 Q60450178-FCA44032-5886-4753-8D49-63BAC1B88B08 @default.
- Q60450178 P31 Q60450178-A85CC9C8-0660-4DD1-A669-E34C19EAB7A8 @default.
- Q60450178 P356 Q60450178-9D11AD81-AC5E-447F-B410-214667DC26B7 @default.
- Q60450178 P433 Q60450178-92FA72D6-6ABE-4153-9F4F-766210B7F63D @default.
- Q60450178 P478 Q60450178-9B787717-EAC6-4575-B376-C749410280B6 @default.
- Q60450178 P577 Q60450178-508FEC19-E4E5-4293-A101-7D00AE38BD63 @default.
- Q60450178 P356 S11664-013-2973-5 @default.
- Q60450178 P1433 Q2197685 @default.
- Q60450178 P1476 "Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication" @default.
- Q60450178 P2093 "A. Nath" @default.
- Q60450178 P2093 "A. Parisini" @default.
- Q60450178 P2093 "Mulpuri V. Rao" @default.
- Q60450178 P2093 "R. Nipoti" @default.
- Q60450178 P2093 "Y. -L. Tian" @default.
- Q60450178 P2888 s11664-013-2973-5 @default.
- Q60450178 P304 "843-849" @default.
- Q60450178 P31 Q13442814 @default.
- Q60450178 P356 "10.1007/S11664-013-2973-5" @default.
- Q60450178 P433 "4" @default.
- Q60450178 P478 "43" @default.
- Q60450178 P577 "2014-01-22T00:00:00Z" @default.