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- Q60650788 description "article scientifique publié en 2006" @default.
- Q60650788 description "article" @default.
- Q60650788 description "im September 2006 veröffentlichter wissenschaftlicher Artikel" @default.
- Q60650788 description "wetenschappelijk artikel" @default.
- Q60650788 description "наукова стаття, опублікована у вересні 2006" @default.
- Q60650788 name "High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering" @default.
- Q60650788 name "High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering" @default.
- Q60650788 type Item @default.
- Q60650788 label "High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering" @default.
- Q60650788 label "High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering" @default.
- Q60650788 prefLabel "High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering" @default.
- Q60650788 prefLabel "High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering" @default.
- Q60650788 P1433 Q60650788-07154B2E-0F57-483B-B187-5A609F8D927D @default.
- Q60650788 P1476 Q60650788-DDF9A14E-2853-4153-A667-0D3C9770FD94 @default.
- Q60650788 P2093 Q60650788-37D0E2A1-E71B-43E5-9B0C-4F5BE24852F3 @default.
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- Q60650788 P2093 Q60650788-76EB9641-3DB1-407C-9094-2E62117CE165 @default.
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- Q60650788 P2093 Q60650788-9E18C907-2AB1-4BB1-B574-81E0089FF34D @default.
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- Q60650788 P304 Q60650788-C1AE7C12-86BD-4AD8-B1C5-D55EB9DF35FE @default.
- Q60650788 P31 Q60650788-88D6554F-FFB5-4A66-B7C3-001F840A4BBB @default.
- Q60650788 P356 Q60650788-015F1BC5-4C7C-4890-BDFD-362194806F7F @default.
- Q60650788 P407 Q60650788-07D7CFD3-5E2F-45D6-B439-D73C6A302319 @default.
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- Q60650788 P478 Q60650788-4A1612A2-7BFD-4350-A510-95CE60D80FBE @default.
- Q60650788 P50 Q60650788-29573B84-80F6-4B35-A044-7CCC0C91E7A4 @default.
- Q60650788 P50 Q60650788-441F7435-3AFC-4AFA-9C15-8575725E1638 @default.
- Q60650788 P50 Q60650788-581D30AE-3127-4191-B60A-7AD176E9FFC2 @default.
- Q60650788 P577 Q60650788-52BBF6E4-B96D-4DA5-BE71-65F9954535CE @default.
- Q60650788 P921 Q60650788-7E7D535F-0B7D-4A0C-8FDC-C81ED897FDA3 @default.
- Q60650788 P921 Q60650788-86D1B94F-CC05-4573-86A8-7215ED80686C @default.
- Q60650788 P356 1.2353811 @default.
- Q60650788 P1433 Q621615 @default.
- Q60650788 P1476 "High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering" @default.
- Q60650788 P2093 "Hideya Kumomi" @default.
- Q60650788 P2093 "Katsumi Abe" @default.
- Q60650788 P2093 "Kenji Nomura" @default.
- Q60650788 P2093 "Masafumi Sano" @default.
- Q60650788 P2093 "Tohru Den" @default.
- Q60650788 P2093 "Toshiaki Aiba" @default.
- Q60650788 P304 "112123" @default.
- Q60650788 P31 Q13442814 @default.
- Q60650788 P356 "10.1063/1.2353811" @default.
- Q60650788 P407 Q1860 @default.
- Q60650788 P433 "11" @default.
- Q60650788 P478 "89" @default.
- Q60650788 P50 Q1346341 @default.
- Q60650788 P50 Q41896224 @default.
- Q60650788 P50 Q56525564 @default.
- Q60650788 P577 "2006-09-11T00:00:00Z" @default.
- Q60650788 P921 Q1137203 @default.
- Q60650788 P921 Q5339 @default.