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- Q61627049 description "article" @default.
- Q61627049 description "im Juni 2014 veröffentlichter wissenschaftlicher Artikel" @default.
- Q61627049 description "wetenschappelijk artikel" @default.
- Q61627049 description "наукова стаття, опублікована в червні 2014" @default.
- Q61627049 name "High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping" @default.
- Q61627049 name "High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping" @default.
- Q61627049 type Item @default.
- Q61627049 label "High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping" @default.
- Q61627049 label "High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping" @default.
- Q61627049 prefLabel "High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping" @default.
- Q61627049 prefLabel "High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping" @default.
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- Q61627049 P356 1.4882415 @default.
- Q61627049 P1433 Q621615 @default.
- Q61627049 P1476 "High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping" @default.
- Q61627049 P2093 "A. BenMoussa" @default.
- Q61627049 P2093 "A. Ougazzaden" @default.
- Q61627049 P2093 "A. Soltani" @default.
- Q61627049 P2093 "A. Telia" @default.
- Q61627049 P2093 "J.-C. Gerbedoen" @default.
- Q61627049 P2093 "M. Mattalah" @default.
- Q61627049 P2093 "M. Rousseau" @default.
- Q61627049 P2093 "N. Bourzgui" @default.
- Q61627049 P2093 "P. L. Bonanno" @default.
- Q61627049 P304 "233506" @default.
- Q61627049 P31 Q13442814 @default.
- Q61627049 P356 "10.1063/1.4882415" @default.
- Q61627049 P407 Q1860 @default.
- Q61627049 P433 "23" @default.
- Q61627049 P478 "104" @default.
- Q61627049 P50 Q50939683 @default.
- Q61627049 P577 "2014-06-09T00:00:00Z" @default.