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- Q61627217 description "article scientifique publié en 2009" @default.
- Q61627217 description "wetenschappelijk artikel" @default.
- Q61627217 description "наукова стаття, опублікована у 2009" @default.
- Q61627217 name "Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity" @default.
- Q61627217 name "Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity" @default.
- Q61627217 type Item @default.
- Q61627217 label "Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity" @default.
- Q61627217 label "Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity" @default.
- Q61627217 prefLabel "Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity" @default.
- Q61627217 prefLabel "Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity" @default.
- Q61627217 P1433 Q61627217-F9FA9926-A57F-458A-BD8C-16E736232C71 @default.
- Q61627217 P1476 Q61627217-A139CA61-6535-4B33-812D-E9B019DF0ADC @default.
- Q61627217 P2093 Q61627217-20593D5F-150A-40D0-91AF-F3C2CD7C3BC3 @default.
- Q61627217 P2093 Q61627217-37E90664-9F3F-4EC9-A70B-80B330AA0D65 @default.
- Q61627217 P2093 Q61627217-56D1E370-351E-4846-AE74-8B8BE8FD612F @default.
- Q61627217 P2093 Q61627217-9E913208-2570-40B1-918A-968602DEAEDB @default.
- Q61627217 P2093 Q61627217-A193E81A-61DC-40E1-85DE-7F3064862ABC @default.
- Q61627217 P304 Q61627217-AFD1FD75-D2FD-45F1-9D87-839E209B2C6D @default.
- Q61627217 P31 Q61627217-6D45996E-8C46-49E9-AA6D-A826537355F1 @default.
- Q61627217 P356 Q61627217-AA59D469-B33E-4936-92B8-D6F54E713623 @default.
- Q61627217 P433 Q61627217-5B0B8255-D604-4449-83DB-90DAAD93E409 @default.
- Q61627217 P478 Q61627217-6B777A42-6411-4DA3-8AB4-BC3F309F3D48 @default.
- Q61627217 P50 Q61627217-821D6484-D392-4477-A07A-03B4B78F9807 @default.
- Q61627217 P577 Q61627217-C395FC03-C91A-476F-86AD-DB5A210BF5A4 @default.
- Q61627217 P356 1.3225599 @default.
- Q61627217 P1433 Q13739491 @default.
- Q61627217 P1476 "Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity" @default.
- Q61627217 P2093 "M. Arens" @default.
- Q61627217 P2093 "M. Reetz" @default.
- Q61627217 P2093 "S. Bouchoule" @default.
- Q61627217 P2093 "S. Golka" @default.
- Q61627217 P2093 "T. Kwapien" @default.
- Q61627217 P304 "2270" @default.
- Q61627217 P31 Q13442814 @default.
- Q61627217 P356 "10.1116/1.3225599" @default.
- Q61627217 P433 "5" @default.
- Q61627217 P478 "27" @default.
- Q61627217 P50 Q50939683 @default.
- Q61627217 P577 "2009-01-01T00:00:00Z" @default.