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- Q61825553 description "article scientifique publié en 1994" @default.
- Q61825553 description "im September 1994 veröffentlichter wissenschaftlicher Artikel" @default.
- Q61825553 description "wetenschappelijk artikel" @default.
- Q61825553 description "наукова стаття, опублікована у вересні 1994" @default.
- Q61825553 name "Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique" @default.
- Q61825553 name "Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique" @default.
- Q61825553 type Item @default.
- Q61825553 label "Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique" @default.
- Q61825553 label "Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique" @default.
- Q61825553 prefLabel "Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique" @default.
- Q61825553 prefLabel "Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique" @default.
- Q61825553 P1433 Q61825553-3732206D-E657-4DBC-A722-443FB85C4278 @default.
- Q61825553 P1476 Q61825553-3A8A7EB7-425A-43B9-A50D-FF23440A4415 @default.
- Q61825553 P2093 Q61825553-20D0D154-52FD-4939-B595-0482F7F86752 @default.
- Q61825553 P2093 Q61825553-5F3DB15F-48C2-4183-97B1-FDA03494F166 @default.
- Q61825553 P2093 Q61825553-90E950C7-5965-47EE-B940-3CB90375B159 @default.
- Q61825553 P2093 Q61825553-980C5031-E12D-48C2-A7DA-007E42042F38 @default.
- Q61825553 P2093 Q61825553-CC9073EA-8C80-47D2-B0FF-981E27E97253 @default.
- Q61825553 P2093 Q61825553-DD6F3A20-5677-4376-ADEA-DEBC04E38908 @default.
- Q61825553 P304 Q61825553-772C8C16-964C-477B-B217-769F5A11BFF0 @default.
- Q61825553 P31 Q61825553-313A9993-E366-45EB-8D91-76868EB99C41 @default.
- Q61825553 P356 Q61825553-C6E43564-DECD-4165-A0FA-7789DF1429E8 @default.
- Q61825553 P433 Q61825553-995D8F41-9278-4D1A-9242-2E89DE1A5B8C @default.
- Q61825553 P478 Q61825553-F190273B-EDFA-4656-AD4F-9B1FF0D5A6C8 @default.
- Q61825553 P577 Q61825553-DB288DD3-6F8E-477A-BD90-35EAEE5B0319 @default.
- Q61825553 P356 011 @default.
- Q61825553 P1433 Q15708713 @default.
- Q61825553 P1476 "Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique" @default.
- Q61825553 P2093 "E Castan" @default.
- Q61825553 P2093 "E Lora-Tamayo" @default.
- Q61825553 P2093 "J Barbolla" @default.
- Q61825553 P2093 "J Montserrat" @default.
- Q61825553 P2093 "L Enriquez" @default.
- Q61825553 P2093 "S Duenas" @default.
- Q61825553 P304 "1637-1648" @default.
- Q61825553 P31 Q13442814 @default.
- Q61825553 P356 "10.1088/0268-1242/9/9/011" @default.
- Q61825553 P433 "9" @default.
- Q61825553 P478 "9" @default.
- Q61825553 P577 "1994-09-01T00:00:00Z" @default.