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- Q61825828 description "article scientifique publié en 2006" @default.
- Q61825828 description "wetenschappelijk artikel" @default.
- Q61825828 description "наукова стаття, опублікована у вересні 2006" @default.
- Q61825828 name "Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs" @default.
- Q61825828 name "Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs" @default.
- Q61825828 type Item @default.
- Q61825828 label "Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs" @default.
- Q61825828 label "Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs" @default.
- Q61825828 prefLabel "Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs" @default.
- Q61825828 prefLabel "Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs" @default.
- Q61825828 P1433 Q61825828-F57F9EBC-9A52-4BBF-B509-2135A7C1F270 @default.
- Q61825828 P1476 Q61825828-EA17B34B-525A-4814-A206-0C24303CB7C9 @default.
- Q61825828 P2093 Q61825828-174EB3E9-BBBB-40E0-9C9F-852557C809F4 @default.
- Q61825828 P2093 Q61825828-19BDF732-551B-4915-9A88-918B1D08D60C @default.
- Q61825828 P2093 Q61825828-280F816E-B2E1-43A0-939F-5A69EB558254 @default.
- Q61825828 P2093 Q61825828-D65A5E1F-F6B4-4689-B98E-A3FA391D6EB8 @default.
- Q61825828 P2093 Q61825828-F5E414AB-C12F-4D88-9135-4CA246E50CF2 @default.
- Q61825828 P304 Q61825828-B97C5662-DBC1-4C46-8694-5D17CDF2B1FE @default.
- Q61825828 P31 Q61825828-B8558CD5-B3DA-44F9-903E-D638AD43B685 @default.
- Q61825828 P356 Q61825828-E25F2B2B-E830-4888-A80B-E9D7B4CA8582 @default.
- Q61825828 P433 Q61825828-0189E5FB-2062-49E6-BF5F-2E503602D689 @default.
- Q61825828 P478 Q61825828-5DCC1E06-102D-416B-8E0C-2631DF62CF7E @default.
- Q61825828 P50 Q61825828-1575BA15-EE53-478E-B050-BD1FF58A0373 @default.
- Q61825828 P50 Q61825828-B6CC65B1-8230-4460-A00A-848EE36D3B9F @default.
- Q61825828 P577 Q61825828-4B9711B1-43F7-4263-815F-51B9E556C5AC @default.
- Q61825828 P8978 Q61825828-EAABAC96-A3E5-41D4-9981-4C26CF53E4ED @default.
- Q61825828 P921 Q61825828-018D2289-7165-457F-B874-75D7C76812EB @default.
- Q61825828 P356 J.MICROREL.2006.07.037 @default.
- Q61825828 P8978 RafiSHMCOC06 @default.
- Q61825828 P1433 Q13852898 @default.
- Q61825828 P1476 "Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs" @default.
- Q61825828 P2093 "A. Mercha" @default.
- Q61825828 P2093 "E. Simoen" @default.
- Q61825828 P2093 "H. Ohyama" @default.
- Q61825828 P2093 "J.M. Rafí" @default.
- Q61825828 P2093 "K. Hayama" @default.
- Q61825828 P304 "1657-1663" @default.
- Q61825828 P31 Q13442814 @default.
- Q61825828 P356 "10.1016/J.MICROREL.2006.07.037" @default.
- Q61825828 P433 "9-11" @default.
- Q61825828 P478 "46" @default.
- Q61825828 P50 Q117032138 @default.
- Q61825828 P50 Q58378427 @default.
- Q61825828 P577 "2006-09-01T00:00:00Z" @default.
- Q61825828 P8978 "journals/mr/RafiSHMCOC06" @default.
- Q61825828 P921 Q214781 @default.