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- Q61825833 description "article scientifique publié en 2005" @default.
- Q61825833 description "im September 2005 veröffentlichter wissenschaftlicher Artikel" @default.
- Q61825833 description "wetenschappelijk artikel" @default.
- Q61825833 description "наукова стаття, опублікована у вересні 2005" @default.
- Q61825833 name "Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs" @default.
- Q61825833 name "Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs" @default.
- Q61825833 type Item @default.
- Q61825833 label "Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs" @default.
- Q61825833 label "Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs" @default.
- Q61825833 prefLabel "Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs" @default.
- Q61825833 prefLabel "Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs" @default.
- Q61825833 P1433 Q61825833-9894FA35-CE2F-46FF-A83E-A74886A1F29E @default.
- Q61825833 P1476 Q61825833-9C72FBBD-FE8A-4931-9F53-9FE30F9B55B6 @default.
- Q61825833 P2093 Q61825833-1CCA007A-67DF-4F17-B57B-467BAB5D2FA8 @default.
- Q61825833 P2093 Q61825833-2A415F90-5F76-4FB3-9A79-EE57727CDF1B @default.
- Q61825833 P2093 Q61825833-C5E9D1BA-0368-46E4-8FC8-8A8B37524DB1 @default.
- Q61825833 P304 Q61825833-FF59D9A2-F7FB-451D-AFCC-E933A2BB8C1A @default.
- Q61825833 P31 Q61825833-C90CACDE-EDAE-4DDD-AEA7-733DEF52C190 @default.
- Q61825833 P356 Q61825833-95A37F3C-2AE1-477D-9710-591F453B177A @default.
- Q61825833 P433 Q61825833-0CF3B31C-7CE8-4C64-A34D-C6369D4FC94E @default.
- Q61825833 P478 Q61825833-EC57BB3C-84A2-4D2E-8DAA-3150CB0E030D @default.
- Q61825833 P50 Q61825833-96F7420E-E8E8-49E1-9756-D5957F04B65D @default.
- Q61825833 P50 Q61825833-A7EFCB94-0C31-4401-A157-E2573B1EE6AE @default.
- Q61825833 P577 Q61825833-24AD64C1-C845-4649-9673-02648EF5AFD8 @default.
- Q61825833 P921 Q61825833-05156230-B82D-4004-84C6-C882932CEC7B @default.
- Q61825833 P356 J.SSE.2005.07.017 @default.
- Q61825833 P1433 Q16459978 @default.
- Q61825833 P1476 "Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs" @default.
- Q61825833 P2093 "A. Mercha" @default.
- Q61825833 P2093 "E. Simoen" @default.
- Q61825833 P2093 "J.M. Rafí" @default.
- Q61825833 P304 "1536-1546" @default.
- Q61825833 P31 Q13442814 @default.
- Q61825833 P356 "10.1016/J.SSE.2005.07.017" @default.
- Q61825833 P433 "9" @default.
- Q61825833 P478 "49" @default.
- Q61825833 P50 Q117032138 @default.
- Q61825833 P50 Q58378427 @default.
- Q61825833 P577 "2005-09-01T00:00:00Z" @default.
- Q61825833 P921 Q214781 @default.